US2019187342A1PendingUtilityA1
Antireflective film, method of producing antireflective film, and eyeglass type display
Est. expiryDec 15, 2037(~11.4 yrs left)· nominal 20-yr term from priority
Inventors:Jun Hatakeyama
C08F 212/21C08F 212/16G02B 2027/0178C08F 212/22C08F 212/24B82Y 40/00B82Y 20/00G03F 7/0392G03F 7/0005G03F 7/0042G02B 27/0103G02B 2027/011G02B 27/0172G02B 2027/0174G02B 1/111G02B 2027/0118G02B 5/0294Y10T428/24802G02B 1/118C08F 212/14C08F 220/1818C08F 220/1812C08F 212/32C08F 220/22G03F 7/0002G02B 5/045G02B 1/11
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Claims
Abstract
The present invention is an antireflective film, including: a support base, and a pattern composed of a photoresist material formed on the support base, the pattern having a larger size at a point closer to the support base. The present invention provides an antireflective film that is able to give antireflection effect to decrease the reflection of light, a method of producing the same, and an eyeglass type display.
Claims
exact text as granted — not AI-modified1 . An antireflective film, comprising:
a support base, and a pattern composed of a photoresist material formed on the support base, the pattern having a larger size at a point closer to the support base.
2 . The antireflective film according to claim 1 , wherein the pattern has a pitch of 400 nm or less.
3 . The antireflective film according to claim 1 , wherein the photoresist material contains a polymer compound having an aromatic group.
4 . The antireflective film according to claim 2 , wherein the photoresist material contains a polymer compound having an aromatic group.
5 . The antireflective film according to claim 1 , wherein the photoresist material contains a polymer compound that contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene, fluorene, anthracene, and cyclopentadienyl complexes.
6 . The antireflective film according to claim 2 , wherein the photoresist material contains a polymer compound that contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene, fluorene, anthracene, and cyclopentadienyl complexes.
7 . The antireflective film according to claim 1 , wherein the photoresist material contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine, benzene (meth)acrylate substituted with iodine or bromine, and benzene (meth)acrylamide substituted with iodine or bromine.
8 . The antireflective film according to claim 2 , wherein the photoresist material contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine, benzene (meth)acrylate substituted with iodine or bromine, and benzene (meth)acrylamide substituted with iodine or bromine.
9 . The antireflective film according to claim 1 , wherein the photoresist material has a refractive index of 1.6 or more with respect to visible light having a wavelength of 590 to 610 nm.
10 . The antireflective film according to claim 1 , wherein the pattern is covered with a low-refractive-index material having a refractive index of 1.45 or less with respect to visible light having a wavelength of 590 to 610 nm.
11 . The antireflective film according to claim 1 , wherein the transmittance of visible light having a wavelength of 400 to 800 nm is 80% or more.
12 . An eyeglass type display, comprising:
a self-emitting display selected from the group consisting of liquid crystal, organic EL, and micro LED installed on a substrate at the side of an eyeball of the eyeglass type display, and a convex lens for focusing installed on the side of an eyeball of the self-emitting display, wherein the antireflective film according to claim 1 is formed on a surface of the convex lens.
13 . A method of producing an antireflective film, comprising:
coating a support base with a photoresist material, and exposing and developing the photoresist material to form a pattern having a larger size at a point closer to the support base.
14 . The method of producing an antireflective film according to claim 13 , further comprising:
forming an organic film as the support base on a substrate using an organic film-forming composition, wherein the pattern is formed on the organic film using the photoresist material.
15 . The method of producing an antireflective film according to claim 13 , wherein the pattern has a pitch of 400 nm or less.
16 . The method of producing an antireflective film according to claim 13 , wherein the photoresist material contains a polymer compound having an aromatic group.
17 . The method of producing an antireflective film according to claim 13 , wherein the photoresist material contains a polymer compound that contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene, fluorene, anthracene, and cyclopentadienyl complexes.
18 . The method of producing an antireflective film according to claim 13 , wherein the photoresist material contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine, benzene (meth)acrylate substituted with iodine or bromine, and benzene (meth)acrylamide substituted with iodine or bromine.
19 . The method of producing an antireflective film according to claim 13 , wherein the photoresist material has a refractive index of 1.6 or more with respect to visible light having a wavelength of 590 to 610 nm.
20 . The method of producing an antireflective film according to claim 13 , further comprising covering the formed pattern with a low-refractive-index material having a refractive index of 1.45 or less with respect to visible light having a wavelength of 590 to 610 nm.Join the waitlist — get patent alerts
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