Three-dimensionally stretchable single crystalline semiconductor membrane

Abstract

A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.

What is claimed is: 
     
         1 . A structure comprising:
 a three-dimensionally stretchable single crystalline semiconductor membrane located on a surface of a substrate.   
     
     
         2 . The structure of  claim 1 , wherein the substrate comprises an elastomer. 
     
     
         3 . The structure of  claim 2 , wherein the elastomer is biocompatible. 
     
     
         4 . The structure of  claim 1 , wherein the substrate comprises an oxide layer. 
     
     
         5 . The structure of  claim 1 , wherein the substrate is located on a stretchable carrier substrate. 
     
     
         6 . The structure of  claim 5 , wherein the stretchable carrier substrate comprises a polyimide foil or a tape. 
     
     
         7 . The structure of  claim 1 , wherein the single crystalline semiconductor membrane comprises a strained semiconductor material. 
     
     
         8 . The structure of  claim 7 , wherein the strained semiconductor material comprises strained silicon. 
     
     
         9 . The structure of  claim 1 , wherein the single crystalline semiconductor membrane has wavy surface. 
     
     
         10 . The structure of  claim 1 , wherein the structure is a component of a wearable device. 
     
     
         11 . A method of forming a semiconductor structure, the method comprising:
 providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate;   forming a single crystalline semiconductor material membrane on a physically exposed surface of the 3D wavy silicon germanium alloy layer;   forming a substrate on a physically exposed surface of the single crystalline semiconductor material membrane; and   removing the 3D wavy silicon germanium alloy layer and the silicon handler substrate to provide a structure including the single crystalline semiconductor membrane located on the substrate.   
     
     
         12 . The method of  claim 11 , wherein the forming the 3D wavy silicon germanium alloy layer comprises an epitaxial growth process that is performed at a temperature from 1000° C. to 1100° C. and a pressure from 50 torr to 100 torr. 
     
     
         13 . The method of  claim 12 , wherein the epitaxial growth process comprises a precursor mixture of germanium tetrachloride and dichlorosilane. 
     
     
         14 . The method of  claim 11 , wherein the 3D wavy silicon germanium alloy layer is a relaxed silicon germanium alloy comprising from 10 atomic percent to 20 atomic percent germanium. 
     
     
         15 . The method of  claim 11 , wherein the forming the single crystalline semiconductor material membrane comprises an epitaxial growth process. 
     
     
         16 . The method of  claim 11 , wherein the substrate is an elastomer. 
     
     
         17 . The method of  claim 16 , wherein the elastomer is biocompatible. 
     
     
         18 . The method of  claim 11 , wherein the substrate is an oxide layer having a planarized surface. 
     
     
         19 . The method of  claim 11 , further comprising forming a stretchable carrier substrate on a physically exposed surface of the substrate prior to removing the 3D wavy silicon germanium alloy layer and the silicon handler substrate. 
     
     
         20 . The method of  claim 11 , wherein the removing the 3D wavy silicon germanium alloy layer and the silicon handler substrate comprises selectively etching the 3D wavy silicon germanium alloy layer so as to release the silicon handler substrate from above the single crystalline semiconductor membrane.