Array Structure, Manufacturing Method Thereof, Array Substrate and Display Device

Abstract

An array structure and a manufacturing method thereof are disclosed. The method for manufacturing the array structure includes: forming a gate insulating layer on a substrate; and etching the gate insulating layer at a position corresponding to a source/drain signal access terminal to form a through-hole structure provided with an outward-inclined side wall in the gate insulating layer.

What is claimed is: 
     
         1 . A method for manufacturing an array structure, comprising:
 forming a gate insulating layer on a substrate; and   etching the gate insulating layer at a position corresponding to a source/drain signal access terminal to form a through-hole structure provided with an outward-inclined side wall in the gate insulating layer.   
     
     
         2 . The method for manufacturing the array structure according to  claim 1 , further comprising: forming a source/drain layer on the gate insulating layer and at a position corresponding to the through-hole structure of the gate insulating layer, wherein a concavity provided with an outward-inclined side wall is formed in the source/drain layer at the position corresponding to the through-hole structure of the gate insulating layer. 
     
     
         3 . The method for manufacturing the array structure according to  claim 2 , further comprising:
 forming a passivation layer on the source/drain layer and etching the passivation layer; and   forming a conductive film on the passivation layer, wherein   the passivation layer is provided with a through-hole structure which comprises an outward-inclined side wall at the position corresponding to the through-hole structure of the gate insulating layer.   
     
     
         4 . The method for manufacturing the array structure according to  claim 3 , wherein the conductive film is electrically connected with the source/drain layer at the position corresponding to the through-hole structure of the gate insulating layer. 
     
     
         5 . The method for manufacturing the array structure according to  claim 3 , further comprising: forming another conductive film at a position corresponding to a gate signal access terminal, wherein
 the conductive film and the another conductive film have a same height on the substrate.   
     
     
         6 . An array structure, comprising:
 a substrate; and   a gate insulating layer provided on the substrate and provided with a through-hole structure which comprises an outward-inclined side wall.   
     
     
         7 . The array structure according to  claim 6 , further comprising a source/drain layer formed on the gate insulating layer and provided with a concavity which comprises an outward-inclined side wall at a position corresponding to the through-hole structure of the gate insulating layer. 
     
     
         8 . The array structure according to  claim 7 , further comprising:
 a passivation layer formed on the source/drain layer and provided with a through-hole structure which comprises an outward-inclined side wall at the position corresponding to the through-hole structure of the gate insulating layer; and   a conductive film formed on the passivation layer.   
     
     
         9 . The array structure according to  claim 8 , wherein the conductive film is electrically connected with the source/drain layer at the position corresponding to the through-hole structure of the gate insulating layer. 
     
     
         10 . The array structure according to  claim 8 , further comprising: another conductive film at a position corresponding to a gate signal access terminal, wherein
 the conductive film and the another conductive film have a same height on the substrate.   
     
     
         11 . An array structure, comprising:
 a gate insulating layer provided on a substrate; and   a source/drain layer provided on the gate insulating layer and provided with a through-hole structure which comprises an outward-inclined side wall.   
     
     
         12 . The array structure according to  claim 11 , further comprising:
 a passivation layer formed on the source/drain layer and provided with a through-hole structure, which comprises an outward-inclined side wall, at a position corresponding to the through hole of the source/drain layer; and   a conductive film formed on the passivation layer.   
     
     
         13 . The array structure according to  claim 12 , wherein the conductive film is electrically connected with the source/drain layer at the position corresponding to the through-hole structure of the source/drain layer. 
     
     
         14 . The array structure according to  claim 12 , further comprising: another conductive film at a position corresponding to a gate signal access terminal, wherein
 the conductive film and the another conductive film have a same height on the substrate.