Tantalum carbide coated carbon material, manufacturing method thereof, and member for apparatus for manufacturing semiconductor single crystal

Abstract

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

What is claimed is: 
     
         1 . A tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, wherein
 in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a (200) plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.   
     
     
         2 . The tantalum carbide coated carbon material according to  claim 1 , wherein an arithmetic mean roughness Ra of a surface of the tantalum carbide coated film is 3.5 μm or less. 
     
     
         3 . The tantalum carbide coated carbon material according to  claim 1 , wherein an arithmetic mean roughness Ra of a surface of the carbon base material is 4.0 μm or less. 
     
     
         4 . The tantalum carbide coated carbon material according to  claim 1 , wherein the number of tantalum atoms contained in the tantalum carbide coated film is larger than the number of carbon atoms and is 1.2 times or smaller the number of carbon atoms. 
     
     
         5 . The tantalum carbide coated carbon material according to  claim 1 , wherein the tantalum carbide coated film contains a chlorine atom at an atomic concentration of 0.01 atm % or more and 1.00 atm % or less. 
     
     
         6 . A member for an apparatus for manufacturing a semiconductor single crystal including a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, wherein
 in the tantalum carbide coated film, intensity of an X-ray diffraction line corresponding to a (200) plane with respect to an out-of-plane direction is larger than the intensity of the X-ray diffraction line corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.   
     
     
         7 . The member for an apparatus for manufacturing a semiconductor single crystal according to  claim 6 , wherein the member for an apparatus for manufacturing a semiconductor single crystal is used in an apparatus for manufacturing a SiC single crystal. 
     
     
         8 . The member for an apparatus for manufacturing a semiconductor single crystal according to  claim 7 , wherein the member for an apparatus for manufacturing a semiconductor single crystal is a crucible or a guide member used in an apparatus for manufacturing a SiC single crystal by a sublimation recrystallization method. 
     
     
         9 . The member for an apparatus for manufacturing a semiconductor single crystal according to  claim 7 , wherein the member for an apparatus for manufacturing a semiconductor single crystal is a susceptor or an inner wall member used in an apparatus for manufacturing a SiC single crystal by epitaxially growing the SiC single crystal by a chemical vapor deposition method. 
     
     
         10 . The member for an apparatus for manufacturing a semiconductor single crystal according to  claim 6 , wherein the member for an apparatus for manufacturing a semiconductor single crystal has two or more locations where a concentration of tantalum atom is low on the surface of the tantalum carbide coated film. 
     
     
         11 . A method for manufacturing a tantalum carbide coated carbon material, comprising:
 preparing a carbon base material having an arithmetic surface roughness Ra of 4.0 μm or less; and   coating at least a part of a surface of the carbon base material with a tantalum carbide coated film.   
     
     
         12 . The method for manufacturing a tantalum carbide coated carbon material according to  claim 11 , wherein the carbon base material is coated with the tantalum carbide coated film while rotating about a rotation axis. 
     
     
         13 . The method for manufacturing a tantalum carbide coated carbon material according to  claim 12 , wherein the tantalum carbide film is coated while revolving the rotation axis about a revolution axis. 
     
     
         14 . The method for manufacturing a tantalum carbide coated carbon material according to  claim 11 , wherein
 the preparing includes supporting the carbon base material in a reaction chamber,   the coating includes   supplying a raw material gas that contains a compound containing a carbon atom and halogenated tantalum into the reaction chamber, and   forming the tantalum carbide coated film by reacting the supplied raw material gas with a thermal CVD method.   
     
     
         15 . The method for manufacturing a tantalum carbide coated carbon material according to  claim 14 , wherein in the supplying of the raw material gas, the temperature in the reaction chamber is set to be 850° C. or higher and 1200° C. or lower. 
     
     
         16 . The method for manufacturing a tantalum carbide coated carbon material according to  claim 14 , wherein in the supplying of the raw material gas, the compound containing a carbon atom is methane (CH 4 ), and halogenated tantalum is tantalum pentachloride (TaCl 5 ), and a flow ratio of the methane to be supplied to the tantalum pentachloride is 2 or more and 20 or less. 
     
     
         17 . The method for manufacturing a tantalum carbide coated carbon material according to  claim 11 , further comprising:
 annealing the carbon base material on which the tantalum carbide coated film is formed after the coating.