Apparatus for treating substrate and method for treating substrate

Abstract

Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

What is claimed is: 
     
         1 . A substrate processing method comprising:
 loading at least one substrate on a substrate supporter provided inside a process space of a process chamber;   moving the substrate by driving the substrate supporter; and   spatially separating process gas for depositing a thin film on the substrate from surface treatment gas for a surface treatment of the thin film inside the process space, and distributing the process gas and the surface treatment gas on the moving substrate.   
     
     
         2 . The method of  claim 1 , wherein the surface treatment gas is locally distributed on the substrate supporter every cycle or every plural cycles with respect to one cycle for one rotation of the substrate supporter. 
     
     
         3 . The method of  claim 2 , wherein the surface treatment gas is activated by plasma, and is then distributed. 
     
     
         4 . The method of  claim 1 , wherein the process gas and the surface treatment gas are distributed on different areas which are spatially separated and are defined on the substrate supporter. 
     
     
         5 . The method of  claim 1 , wherein the surface treatment gas is selected from any one kind among hydrogen (H2) gas, nitrogen (N2) gas, gas obtained by mixing hydrogen (H2) gas and nitrogen (N2) gas, oxygen (O2) gas, nitrogen dioxide (NO2) gas, argon (Ar) gas, helium (He) gas, and ammonia (NH3) gas. 
     
     
         6 . The method of  claim 5 ,
 wherein the process gas contains source gas and reactant gas to form the thin film, and   wherein the source gas and the reactant gas sequentially reach the substrate, or simultaneously reach the substrate.   
     
     
         7 . The method of  claim 6 , wherein at least any one kind of the source gas and the reactant gas is activated by plasma, and is then distributed. 
     
     
         8 . The method of  claim 6 , further comprising distributing purge gas to an area positioned in-between each of areas on which the source gas, the reactant gas and the surface treatment gas are distributed. 
     
     
         9 . The method of  claim 1 ,
 wherein the process gas contains source gas and reactant gas to form the thin film, and   wherein the surface treatment gas is activated by plasma, and is then distributed to an area positioned in-between each of areas on which the source gas and the reactant gas are distributed.   
     
     
         10 . The method of  claim 9 , wherein the surface treatment gas is argon gas or helium gas. 
     
     
         11 . The method of  claim 1 ,
 wherein the process gas contains source gas and reactant gas to form the thin film,   wherein the distributing the process gas and the surface treatment gas on the moving substrate includes distributing the source gas to a first gas distribution area, distributing the reactant gas to a second gas distribution area, distributing the reactant gas to a third gas distribution area, and distributing the surface treatment gas to a surface treatment gas distribution area,   wherein the moving the substrate by driving the substrate supporter includes rotating the substrate supporter so that the source gas, the reactant gas, the reactant gas and the surface treatment gas sequentially reach the substrate.   
     
     
         12 . The method of  claim 11 ,
 wherein the first gas distribution area, the second gas distribution area, the third gas distribution area and the surface treatment gas distribution area are spatially separated and are defined on the substrate supporter.   
     
     
         13 . The method of  claim 1 , wherein the process gas contains source gas and reactant gas to form the thin film,
 wherein the distributing the process gas and the surface treatment gas on the moving substrate includes distributing the source gas and the reactant gas to a first gas distribution area to deposit the thin film, and   wherein the source gas and the reactant gas simultaneously reach the substrate in the first gas distribution area.   
     
     
         14 . The method of  claim 13 ,
 wherein the distributing the source gas and the reactant gas to the first gas distribution area includes distributing the source gas to the first gas distribution area through a first gas distribution space, and distributing the reactant gas to the first gas distribution area through a second gas distribution space which is spatially separated from the first gas distribution space.   
     
     
         15 . The method of  claim 14 ,
 wherein the distributing the source gas to the first gas distribution area through the first gas distribution space includes increasing a distribution pressure of the source gas using a gas distribution pattern member, wherein the gas distribution pattern member covers a lower side of the first gas distribution space.