US2019139840A1PendingUtilityA1
Wafer scale testing and initialization of small die chips
Est. expiryOct 2, 2037(~11.2 yrs left)· nominal 20-yr term from priority
H10W 72/0198H10W 72/252H10W 72/222H10P 72/7422H10P 72/7416H10P 74/277H10P 74/273H10P 74/207H10P 54/00H10D 84/01H10W 90/284H10P 72/7402H10P 74/27H01L 21/77H01L 2225/06596H01L 22/30
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Claims
Abstract
A chip intermediate body includes a semiconductor region including plural chip areas. The chip areas respectively are cut out as semiconductor chips. A cut region is provided along edges of the chip areas, the cut region being cut to cut out the semiconductor chips. A contact region is provided opposite to the chip areas across the cut region, the contact region being configured to be contacted by a probe of a test unit to test the chip areas, and electric wiring is provided continuously with the cut region to connect the chip areas and the contact region.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A chip intermediate body, comprising:
a super-die separated from a wafer, the super-die including a plurality of small-dies, the small-dies respectively being cut out as semiconductor chips; a cut region provided along edges of the small-dies, the cut region being cut to separate the semiconductor chips; a contact region provided opposite to the chip areas across the cut region, the contact region being configured to be contacted on a plurality of test pads by a probe of a test unit to test the small-dies; and electric wiring provided continuously with the cut region to connect the small-dies of the super-die and the contact region.
2 . The chip intermediate body of claim 1 , wherein each of the small-dies includes bumps on a surface of the small-dies.
3 . The chip intermediate body of claim 2 , wherein
the test pads are configured to be contacted by respective contact points of the probe of the test unit, and each of the test pads has a larger area than each of the bumps.
4 . The chip intermediate body of claim 1 , wherein the cut region includes other electric wiring that at least interconnects the small-dies and connects the small-dies and the contact region.
5 . The chip intermediate body of claim 4 , wherein the other electric wiring is electrically connected with the electric wiring.
6 . The chip intermediate body of claim 4 , wherein each of the small-dies includes circuit wiring, and
the other electric wiring and the circuit wiring are present in the same layer of the chip intermediate body.
7 . The chip intermediate body of claim 6 , wherein the circuit wiring is set apart from a boundary between the small-dies and the cut region.
8 . The chip intermediate body of claim 1 , wherein the chip intermediate body is a plate member and has a generally square shape in a plane view.
9 . The chip intermediate body of claim 8 , wherein the contact region is provided along edges of the chip intermediate body.
10 . A chip intermediate body manufacturing system for manufacturing a chip intermediate body, the chip intermediate body comprising:
a super-die separated from a wafer, the super-die including a plurality of small-dies, the small-dies respectively being separated as semiconductor chips; a cut region provided along edges of the small-dies, the cut region being cut to cut out the semiconductor chips; a contact region provided opposite to the small-dies across the cut region, the contact region being configured to be contacted on a plurality of test pads by a probe of a test unit to test the small-dies; and electric wiring provided continuously with the cut region to connect the small-dies of the super-die and the contact region.
11 . The chip intermediate body of claim 10 , wherein each of the small-dies includes bumps on a surface of the small-dies.
12 . The chip intermediate body of claim 11 , wherein
the test pads are configured to be contacted by respective contact points of the probe of the test unit, and each of the test pads has a larger area than each of the bumps.
13 . The chip intermediate body of claim 10 , wherein the cut region includes other electric wiring that at least interconnects the small-dies and connects the small-dies and the contact region.
14 . The chip intermediate body of claim 13 , wherein the other electric wiring is electrically connected with the electric wiring.
15 . The chip intermediate body of claim 13 , wherein each of the small-dies includes circuit wiring, and
the other electric wiring and the circuit wiring are present in the same layer of the chip intermediate body.
16 . The chip intermediate body of claim 15 , wherein the circuit wiring is set apart from a boundary between the small-dies and the cut region.
17 . The chip intermediate body of claim 10 , wherein the chip intermediate body is a plate member and has a generally square shape in a plane view.
18 . The chip intermediate body of claim 17 , wherein the contact region is provided along edges of the chip intermediate body.
19 . A semiconductor chip manufacturing system, comprising:
a fabrication unit for fabricating a chip intermediate body including a super-die separated from a wafer, the super-die including a cut region, a contact region, electric wiring, and a plurality of small-dies, the small dies being separated as semiconductor chips, the cut region being provided along edges of the small-dies, the cut region being cut to cut out the semiconductor chips, the contact region being provided opposite to the small-dies across the cut region, the electric wiring being provided continuously with the cut region to connect the small-dies of the super-die and the contact region; a test unit for testing the small-dies, the test unit including a probe to contact the contact region to test the small-dies; and a separation unit for cutting the cut region to separate the semiconductor chips.
20 . A method for testing a chip area comprising:
fabricating a chip intermediate body including a super-die, the super-die including a cut region, a contact region, electric wiring, and a plurality of small-dies, the small-dies being separated as semiconductor chips, the cut region being provided along edges of the small-dies, the cut region being cut to cut out the semiconductor chips, the contact region being provided opposite to the small-dies across the cut region, the electric wiring being provided continuously with the cut region to connect the small-dies of the super-die and the contact region; and testing the small-dies with a probe of a test unit contacting the contact region.Join the waitlist — get patent alerts
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