Anti-fuse structure

Abstract

An anti-fuse structure includes an active area, a gate electrode over the active area, and a dielectric layer between the active area and the gate electrode. The active area and the gate electrode partially overlap in a vertical projection direction, forming a plurality of channels. One of the gate electrode and the active area includes a plurality of extending portions to form the plurality of channels. The active area includes a first portion and a plurality of second portions, the first portion has an edge facing the gate electrode, each of the second portions extends from the edge of the first portion toward the gate electrode, and the second portions at least partially overlap the gate electrode in the vertical projection direction, forming the plurality of channels

What is claimed is: 
     
         1 . An anti-fuse structure, comprising:
 an active area;   a gate electrode over the active area; and   a dielectric layer between the active area and the gate electrode, wherein the active area and the gate electrode partially overlap in a vertical projection direction, forming a plurality of channels;   wherein the active area comprises a first portion and a plurality of second portions, the first portion has an edge facing the gate electrode, each of the second portions extends from the edge of the first portion toward the gate electrode, and the second portions at least partially overlap the gate electrode in the vertical projection direction, forming the plurality of channels.   
     
     
         2 . The anti-fuse structure of  claim 1 , wherein the edge of the first portion of the active area is separate from the gate electrode. 
     
     
         3 . The anti-fuse structure of  claim 1 , wherein the edge of the first portion of the active area overlaps the gate electrode in the vertical projection direction. 
     
     
         4 . An anti-fuse structure, comprising:
 an active area;   a gate electrode over the active area; and   a dielectric layer between the active area and the gate electrode, wherein the active area comprises a first portion and a plurality of second portions, the first portion has an edge facing the gate electrode, each of the second portions extends from the edge of the first portion toward the gate electrode, and the second portions at least partially overlap the gate electrode in a vertical projection direction.   
     
     
         5 . The anti-fuse structure of  claim 4 , wherein each of the second portions of the active area is substantially rectangular in shape. 
     
     
         6 . The anti-fuse structure of  claim 4 , wherein the plurality of second portions of the active area are arranged substantially parallel to each other. 
     
     
         7 . The anti-fuse structure of  claim 4 , wherein the edge of the first portion of the active area is separate from the gate electrode. 
     
     
         8 . The anti-fuse structure of  claim 4 , wherein the edge of the first portion of the active area overlaps the gate electrode in the vertical projection direction.