Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

Abstract

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

What is claimed is: 
     
         1 . A semiconductor manufacturing apparatus, comprising:
 a container in which a processing chamber is provided;   a stage provided inside the processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and   a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein   mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and   catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied as the catalytic gas.   
     
     
         2 . The semiconductor manufacturing apparatus according to  claim 1 , wherein
 the metal element included in the high-k insulating film is a metal element classified in a fifth period in a periodic table and succeeding periods, and   the high-k insulating film includes silicate of the metal element.   
     
     
         3 . The semiconductor manufacturing apparatus according to  claim 1 , wherein
 the metal element included in the high-k insulating film is a rare earth element, and   the high-k insulating film includes silicate of the rare earth element.   
     
     
         4 . The semiconductor manufacturing apparatus according to  claim 1 , wherein
 the first system includes a first vaporizer,   the second system includes a second vaporizer,   the first vaporizer vaporizes a mixed chemical liquid of a chemical stock liquid for the complex forming gas and a chemical stock liquid for the complex stabilizing material gas under a predetermined temperature and pressure condition, and   the second vaporizer vaporizes a chemical stock liquid using the second organometallic complex as a raw material under the predetermined temperature and pressure condition.   
     
     
         5 . A method for manufacturing a semiconductor device, comprising:
 mounting a semiconductor substrate, in which a mask layer having a predetermined pattern shape is formed on a high-k insulating film including silicate, in a processing chamber;   desorbing gas or foreign matter adsorbed on a surface of the semiconductor substrate;   supplying catalytic gas under decompression and heating;   cooling the semiconductor substrate after a supply of the catalytic gas is stopped and supplying reactive gas to the processing chamber in a state in which a temperature of the semiconductor substrate falls below a predetermined temperature;   decompressing and heating an inside of the processing chamber by stopping the supply of the reactive gas; and   exhausting a first organometallic complex from the processing chamber by vaporizing the first organometallic complex generated by reacting with a metal element included in the high-k insulating film.   
     
     
         6 . The method for manufacturing a semiconductor device according to  claim 5 , wherein
 the catalytic gas is catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material, and   the reactive gas is mixed gas which includes complex forming gas reacting with the metal element included in the high-k insulating film to form the first organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex.   
     
     
         7 . The method for manufacturing a semiconductor device according to  claim 5 , wherein
 the metal element included in the high-k insulating film is a metal element classified in a fifth period in a periodic table and succeeding periods, and   the high-k insulating film includes silicate of the metal element.   
     
     
         8 . The method for manufacturing a semiconductor device according to  claim 5 , wherein
 the metal element included in the high-k insulating film is a rare earth element, and   the high-k insulating film includes silicate of the rare earth element.   
     
     
         9 . The method for manufacturing a semiconductor device according to  claim 6 , wherein
 a raw material for the complex forming gas is an organic compound obtained by forming a coordinate bond of at least two or more coordination bond to a transition metal atom, a so-called multidentate ligand molecule.   
     
     
         10 . The method for manufacturing a semiconductor device according to  claim 9 , wherein
 the raw material for the complex forming gas is diketones including a fluorine atom.   
     
     
         11 . The method for manufacturing a semiconductor device according to  claim 6 , wherein
 a raw material for the complex stabilizing material gas is an organic compound having two or more elements having an unshared electron pair of an oxygen atom or a nitrogen atom in a molecular skeleton and 5 or more atoms except a hydrogen atom and a fluorine atom.   
     
     
         12 . The method for manufacturing a semiconductor device according to  claim 11 , wherein
 the raw material for the complex stabilizing material gas is ethers.   
     
     
         13 . The method for manufacturing a semiconductor device according to  claim 6 , wherein
 the second organometallic complex is an organometallic complex including an iron group element.   
     
     
         14 . The method for manufacturing a semiconductor device according to  claim 13 , wherein
 the second organometallic complex is an organometallic complex including cobalt.   
     
     
         15 . The method for manufacturing a semiconductor device according to  claim 13 , wherein
 the second organometallic complex is an organometallic complex not including a fluorine atom.