Room temperature metal direct bonding

Abstract

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

1 . A bonded structure comprising:
 a first plurality of metallic pads disposed on a first substrate;   a first non-metallic region located on a first surface of said first substrate proximate to the first plurality of metallic pads;   a second plurality of metallic pads disposed on a second substrate; and   a second non-metallic region located on a second surface of the second substrate proximate to the second plurality of metallic pads,   wherein a portion of each metallic pad of the first plurality of metallic pads directly contacts a corresponding metallic pad of the second plurality of metallic pads to form a metallic contact, and   wherein the first non-metallic region contacts and is directly bonded to the second non-metallic region along an interface, the interface between the first non-metallic region and the second non-metallic region extending substantially to the metallic contact.   
     
     
         2 . The bonded structure of  claim 1 , wherein each metallic pad comprises a reflowable material. 
     
     
         3 . The bonded structure of  claim 1 , wherein the first non-metallic region comprises silicon oxide.