Method of manufacturing oxide crystal thin film

Abstract

There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

1 . A method of manufacturing an oxide crystal film comprising:
 preparing a raw material solution comprising water and at least one compound that is selected from among gallium bromide, gallium iodide, indium bromide and indium iodide;   forming raw material particles from the raw material solution comprising water and the at least one compound;   carrying the raw material particles to a surface of a sample by a carrier gas; and   forming an oxide crystal film comprising a corundum structure on the surface of the sample that comprises a corundum structure.   
     
     
         2 . The method of  claim 1 , wherein
 the oxide crystal film comprising the corundum structure comprises an α-phase In 2 O 3  crystal.   
     
     
         3 . The method of  claim 1 , wherein
 the oxide crystal film comprising the corundum structure comprises an α-phase Ga 2 O 3  crystal.   
     
     
         4 . The method of  claim 1 , wherein
 the oxide crystal film comprising the corundum structure is a mixed crystal film.   
     
     
         5 . The method of  claim 1 , wherein
 the at least one compound with a concentration that is 0.005 to 2 mol/L is comprised in the raw material solution.   
     
     
         6 . The method of  claim 1 , wherein
 the carrier gas has a flow rate of 0.5 to 10 L/min.   
     
     
         7 . The method of  claim 2 , wherein
 the α-phase In 2 O 3  crystal is oriented to a crystal axis.   
     
     
         8 . The method of  claim 3 , wherein
 the α-phase Ga 2 O 3  crystal is oriented to a crystal axis.   
     
     
         9 . The method of  claim 1 , wherein
 the forming the oxide crystal film comprising the corundum structure on the surface of the sample that comprises the corundum structure is conducted at a temperature of 400 to 700° C.   
     
     
         10 . The method of  claim 1 , wherein
 the raw material particles carried to the surface of the sample further comprises particles formed from another raw material solution that comprises an aluminum organometallic complex.   
     
     
         11 . The method of  claim 10 , wherein
 the oxide crystal film comprising the corundum structure is a mixed crystal film.   
     
     
         12 . A method of manufacturing an oxide crystal film comprising:
 preparing a first raw material solution comprising water and at least one compound that is selected from gallium bromide and gallium iodide;   forming raw material particles from the first raw material solution comprising water and the at least one compound;   carrying the raw material particles to a surface of a sample by a carrier gas, the raw material particles to the surface of the sample further comprising particles formed from a second raw material solution that comprises water and an aluminum organometallic complex; and   forming an oxide crystal film comprising a corundum structure on the surface of the sample that comprises a corundum structure.   
     
     
         13 . The method of  claim 12 , wherein
 the oxide crystal film comprising the corundum structure is a mixed crystal film.   
     
     
         14 . A method of manufacturing an oxide crystal film comprising:
 preparing a raw material solution comprising water and at least one compound that is selected from indium bromide and indium iodide;   forming raw material particles from the raw material solution comprising water and the at least one compound;   carrying the raw material particles to a surface of a sample by a carrier gas; and   forming an oxide crystal film comprising a corundum structure on the surface of the sample that comprises a corundum structure.   
     
     
         15 . The method of  claim 14 , wherein
 the oxide crystal film comprising the corundum structure comprises an α-phase In 2 O 3  crystal.   
     
     
         16 . The method of  claim 14 , wherein
 the raw material particles carried to the surface of the sample further comprises particles formed from another raw material solution that comprises an aluminum organometallic complex.   
     
     
         17 . The method of  claim 16 , wherein
 the oxide crystal film comprising the corundum structure is a mixed crystal film.   
     
     
         18 . The method of  claim 14 , wherein
 the at least one compound with a concentration that is 0.005 to 2 mol/L is comprised in the raw material solution.   
     
     
         19 . The method of  claim 14 , wherein
 the carrier gas has a flow rate of 0.5 to 10 L/min.   
     
     
         20 . The method of  claim 3 , wherein
 the α-phase Ga 2 O 3  crystal is a corundum-structured single phase.