Qubits by selective laser-modulated deposition

Abstract

A method for adjusting a qubit includes measuring a qubit characteristic of a qubit device and computing a modification to correct the qubit characteristic. A geometry of a shunt capacitor is adjusted using a laser direct write process. The qubit characteristic is verified.

1 . A method for adjusting a qubit, comprising:
 computing a modification to correct a qubit characteristic measurement;   adjusting a geometry of a shunt capacitor using a direct write process; and   verifying the qubit characteristic measurement.   
     
     
         2 . The method as recited in  claim 1 , further comprising, repeating the steps until the qubit characteristic has been corrected. 
     
     
         3 . The method as recited in  claim 1 , wherein adjusting the geometry includes adding material to the shunt capacitor. 
     
     
         4 . The method as recited in  claim 3 , wherein adding material to the shunt capacitor includes employing an argon laser with aluminum methylamine hydride to deposit aluminum on the shunt capacitor. 
     
     
         5 . The method as recited in  claim 1 , wherein adjusting the geometry includes removing material from the shunt capacitor. 
     
     
         6 . The method as recited in  claim 1 , wherein adjusting the geometry includes modifying material of the shunt capacitor. 
     
     
         7 . The method as recited in  claim 6 , wherein modifying material of the shunt capacitor includes oxidizing or nitriding the material of the shunt capacitor. 
     
     
         8 . The method as recited in  claim 1 , wherein a qubit device having the qubit characteristic measurement includes a Josephson junction. 
     
     
         9 . The method as recited in  claim 1 , wherein adjusting the geometry includes forming a correction pattern at a position of minimum electric field participation so that reduction of qubit device coherence is minimized. 
     
     
         10 . A method for adjusting a qubit, comprising:
 computing a modification to correct a qubit characteristic measurement for a qubit device;   adjusting a geometry of a shunt capacitor, post production, using a direct write process;   verifying that the qubit characteristic measurement has been changed by the adjusting of the geometry; and   repeating until the qubit characteristic measurement has been corrected.   
     
     
         11 . The method as recited in  claim 10 , wherein adjusting the geometry includes adding material to the shunt capacitor. 
     
     
         12 . The method as recited in  claim 11 , wherein adding material to the shunt capacitor includes employing an argon laser with aluminum methylamine hydride to deposit aluminum on the shunt capacitor. 
     
     
         13 . The method as recited in  claim 10 , wherein adjusting the geometry includes removing material from the shunt capacitor. 
     
     
         14 . The method as recited in  claim 10 , wherein adjusting the geometry includes modifying material of the shunt capacitor. 
     
     
         15 . The method as recited in  claim 14 , wherein modifying material of the shunt capacitor includes oxidizing or nitriding the material of the shunt capacitor. 
     
     
         16 . The method as recited in  claim 10 , wherein adjusting the geometry includes forming a correction pattern at a position of minimum electric field participation so that reduction of qubit device coherence is minimized. 
     
     
         17 . A qubit device, comprising:
 a Josephson junction; and   a qubit-characteristic modifiable shunt capacitor coupled to the Josephson junction.   
     
     
         18 . The qubit device as recited in  claim 17 , wherein the qubit-characteristic modifiable shunt capacitor includes a modifiable shape by having material added to or subtracted from the shunt capacitor, post-production. 
     
     
         19 . The qubit device as recited in  claim 17 , wherein the qubit-characteristic modifiable shunt capacitor is adjusted by modified material of the shunt capacitor. 
     
     
         20 . The qubit device as recited in  claim 17 , wherein the qubit-characteristic modifiable shunt capacitor includes a shape having a correction pattern at a position of minimum electric field participation so that reduction of qubit device coherence is minimized.