Interconnection structure lined by isolation layer

Abstract

A semiconductor device includes: a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and an isolation layer comprising a first portion and a second portion, wherein the first portion of the isolation layer lines the sidewalls of the first portion of the first conductive structure, and the second portion of the isolation layer lines at least a portion of the bottom surface of the first portion of the first conductive structure.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first conductive structure including a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and   an isolation layer comprising a first portion and a second portion,   wherein the first portion of the isolation layer lines the sidewalls of the first portion of the first conductive structure, and the second portion of the isolation layer lines at least a portion of the bottom surface of the first portion of the first conductive structure.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the isolation layer is configured to electrically isolate the first conductive structure from the first dielectric layer. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the isolation layer comprises a non-conductive material. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the first conductive structure further comprises:
 a second portion having sidewalls and a bottom surface, wherein the second portion of the first conductive structure extends from the bottom surface of the first portion of the first conductive structure.   
     
     
         5 . The semiconductor device of  claim 4 , wherein the isolation layer comprises a third portion extending from the second portion of the isolation layer, the third portion of the isolation layer lining the sidewalls of the second portion of the first conductive structure. 
     
     
         6 . The semiconductor device of  claim 4 , wherein the second portion of the first conductive structure is coupled to the first portion of the first conductive structure through a portion of the bottom surface of the first portion of the first conductive structure that is not lined by the isolation layer. 
     
     
         7 . The semiconductor device of  claim 4 , further comprising:
 a second conductive structure embedded in a second dielectric layer disposed below the first dielectric layer,   wherein the second conductive structure is coupled to the first portion of the first conductive structure through the second portion of the first conductive structure.   
     
     
         8 . The semiconductor device of  claim 1 , further comprising:
 a second conductive structure embedded in a second dielectric layer disposed below the first dielectric layer,   wherein the second conductive structure is isolated from the first portion of the first conductive structure by at least the isolation layer.   
     
     
         9 . A semiconductor device, comprising:
 a first conductive structure having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and   an isolation layer comprising a first portion and a second portion,   wherein the first portion of the isolation layer lines sidewalls of the first conductive structure, and the second portion of the isolation layer lines the bottom surface of the first conductive structure.   
     
     
         10 . The semiconductor device of  claim 9 , wherein the isolation layer is configured to electrically isolate the first conductive structure from the first dielectric layer. 
     
     
         11 . The semiconductor device of  claim 9 , wherein the isolation layer comprises a non-conductive material. 
     
     
         12 . The semiconductor device of  claim 9 , further comprising:
 a second conductive structure embedded in a second dielectric layer disposed below the first dielectric layer,   wherein the second conductive structure is isolated from the first conductive structure by at least the isolation layer.   
     
     
         13 . A semiconductor device, comprising:
 a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and   a first isolation layer comprising a first portion and a second portion,   wherein the first portion of the first isolation layer lines sidewalls of the first portion of the first conductive structure, and the second portion of the first isolation layer, extending from the first portion, lines a first portion of the bottom surface of the first portion of the first conductive structure.   
     
     
         14 . The semiconductor device of  claim 13 , wherein the first isolation layer is configured to electrically isolate the first conductive structure from the first dielectric layer. 
     
     
         15 . The semiconductor device of  claim 13 , wherein the first isolation layer is formed of a non-conductive material. 
     
     
         16 . The semiconductor device of  claim 13 , wherein the first conductive structure further comprises:
 a second portion having sidewalls and a bottom surface, wherein the second portion of the first conductive structure extends from the bottom surface of the first portion of the first conductive structure.   
     
     
         17 . The semiconductor device of  claim 16 , wherein the first isolation layer comprises a third portion extending from the second portion. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the third portion lines the sidewalls of the second portion of the first conductive structure. 
     
     
         19 . The semiconductor device of  claim 16 , further comprising:
 a second conductive structure embedded in a second dielectric layer disposed below the first dielectric layer,   wherein the second conductive structure is coupled to the first portion of the first conductive structure through the second portion of the first conductive structure.   
     
     
         20 . The semiconductor device of  claim 19 , wherein sidewalls and a bottom surface of the second conductive structure is lined by a second isolation layer that is substantially similar to the first isolation layer.