Phosphorus or arsenic ion implantation utilizing enhanced source techniques

Abstract

Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

What is claimed is: 
     
         1 - 35 . (canceled) 
     
     
         36 . An ion implantation system, comprising:
 an ion implanter comprising an ion source chamber; and   a gas supply assembly comprising one or more gas supply vessels arranged to supply a mixture of gases to the ion implanter, wherein the mixture of gases comprises one of (i)-(viii):   (i) PH 3  and PF 3 , wherein the concentration of PH 3  is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases; (ii) PH 3  and PF 5 , wherein the concentration of PH 3  is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases; (iii) PF x  and H 2 , wherein x has any stoichiometric acceptable value, and wherein the concentration of H 2  does not exceed 50% by volume, based on the total volume of the mixture of gases; (iv) PF x , PH 3 , H 2 , and inert gas, wherein x has any stoichiometric acceptable value; (v) AsH 3  and AsF 3 , wherein the concentration of AsH 3  is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases; (vi) AsH 3  and AsF 5 , wherein the concentration of AsH 3  is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases; (vii) AsF x  and H 2 , wherein x has any stoichiometric acceptable value, and wherein the concentration of H 2  does not exceed 50% by volume, based on the total volume of the mixture of gases; and (viii) AsF x , AsH 3 , H 2 , and inert gas, wherein x has any stoichiometric acceptable value.   
     
     
         37 . The ion implantation system of  claim 36 , wherein x has a value of from 3 to 5. 
     
     
         38 . The ion implantation system of  claim 36 , wherein PF x  comprises PF 5 . 
     
     
         39 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (i) PH 3  and PF 3 . 
     
     
         40 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (ii) PH 3  and PF 5 . 
     
     
         41 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (iii) PF x  and H 2 . 
     
     
         42 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (iv) PF x , PH 3 , H 2 , and inert gas. 
     
     
         43 . The ion implantation system of  claim 42 , wherein the inert gas comprises inert gas selected from the group consisting of argon, neon, nitrogen, xenon, helium, and mixtures of two or more thereof. 
     
     
         44 . The ion implantation system of  claim 36 , wherein AsF x  comprises AsF 5 . 
     
     
         45 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (v) AsH 3  and AsF 3 . 
     
     
         46 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (vi) AsH 3  and AsF 5 . 
     
     
         47 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (vii) AsF x  and H 2 . 
     
     
         48 . The ion implantation system of  claim 36 , wherein the mixture of gases comprises (viii) PF x , PH 3 , H 2 , and inert gas. 
     
     
         49 . The ion implantation system of  claim 48 , wherein the inert gas comprises inert gas selected from the group consisting of argon, neon, nitrogen, xenon, helium, and mixtures of two or more thereof. 
     
     
         50 . (canceled) 
     
     
         51 . A method of enhancing performance of an ion implanter, comprising delivering to an ion source chamber thereof a gas mixture selected from among (i)-(viii):
 (i) PH 3  and PF 3 , wherein the concentration of PH 3  is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases; (ii) PH 3  and PF 5 , wherein the concentration of PH 3  is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases; (iii) PF x  and H 2 , wherein x has any stoichiometric acceptable value, and wherein the concentration of H 2  does not exceed 50% by volume, based on the total volume of the mixture of gases; (iv) PF x , PH 3 , H 2 , and inert gas, wherein x has any stoichiometric acceptable value; (v) AsH 3  and AsF 3 , wherein the concentration of AsH 3  is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases; (vi) AsH 3  and AsF 5 , wherein the concentration of AsH 3  is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases; (vii) AsF x  and H 2 , wherein x has any stoichiometric acceptable value, and wherein the concentration of H 2  does not exceed 50% by volume, based on the total volume of the mixture of gases; and (viii) AsF x , AsH 3 , H 2 , and inert gas, wherein x has any stoichiometric acceptable value.