Semiconductor Device, Tool, and Method of Manufacturing

Abstract

A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.

What is claimed is: 
     
         1 . A semiconductor device manufacturing tool comprising:
 a first wet etch cleaning station;   a first plasma treatment station;   a transfer station operationally located between the first wet etch cleaning station and the first plasma treatment station; and   an exterior housing surrounding all of the first wet etch cleaning station, the first plasma treatment station, and the transfer station.   
     
     
         2 . The semiconductor device manufacturing tool of  claim 1 , further comprising a second wet etch cleaning station. 
     
     
         3 . The semiconductor device manufacturing tool of  claim 2 , further comprising a feed tank operationally connected to both the first wet etch cleaning station and the second wet etch cleaning station. 
     
     
         4 . The semiconductor device manufacturing tool of  claim 1 , further comprising a second plasma treatment station. 
     
     
         5 . The semiconductor device manufacturing tool of  claim 4 , further comprising a first treatment gas supplier operationally connected to both the first plasma treatment station and the second plasma treatment station. 
     
     
         6 . The semiconductor device manufacturing tool of  claim 5 , wherein the first treatment gas supplier contains a charge release treatment gas. 
     
     
         7 . The semiconductor device manufacturing tool of  claim 1 , wherein the first wet etch cleaning station is a spin-on station. 
     
     
         8 . A semiconductor device manufacturing tool comprising:
 a wet etch section comprising a plurality of wet etching chambers;   a first transfer station located to operate cooperatively with at least one of the wet etching chambers; and   a plasma treatment section comprising a plurality of plasma treatment chambers, wherein at least one of the plurality of plasma treatment chambers is located to operate cooperatively with the first transfer station, wherein the wet etch section, the first transfer station, and the plasma treatment section are part of a single machine.   
     
     
         9 . The semiconductor device manufacturing tool of  claim 8 , further comprising a feed tank connected to each of the wet etching chambers. 
     
     
         10 . The semiconductor device manufacturing tool of  claim 9 , further comprising:
 a first input to the feed tank;   a second input to the feed tank; and   a third input to the feed tank.   
     
     
         11 . The semiconductor device manufacturing tool of  claim 10 , wherein the first input is connected to a mixing unit. 
     
     
         12 . The semiconductor device manufacturing tool of  claim 11 , wherein the second input is a spike input. 
     
     
         13 . The semiconductor device manufacturing tool of  claim 12 , wherein the third input is a recycle input from the wet etching chambers. 
     
     
         14 . The semiconductor device manufacturing tool of  claim 8 , wherein at least one of the wet etching chambers comprises a rotatable chuck. 
     
     
         15 . A semiconductor device manufacturing tool comprising:
 a wet etching section comprising a wet etching station;   a plasma treatment section comprising a plasma treatment station;   a transferred station between the wet etching section and the plasma treatment section; and   a housing around the wet etch section, the plasma treatment section, and the transfer station, wherein the transfer station is configured to transfer a wafer from the wet etching station to the plasma treatment station without breaking to exterior atmosphere.   
     
     
         16 . The semiconductor device manufacturing tool of  claim 15 , wherein the plasma treatment section comprises a chamber housing located inside the housing. 
     
     
         17 . The semiconductor device manufacturing tool of  claim 16 , wherein the plasma treatment section comprises a mounting platform configured to support the wafer, and comprises a first electrode embedded in the mounting platform, wherein the mounting platform and the first electrode are inside the chamber housing. 
     
     
         18 . The semiconductor device manufacturing tool of  claim 17 , wherein the plasma treatment section further comprises a second electrode disposed outside the chamber housing, wherein the first electrode and the second electrode are configured to turn a gas source inside the chamber housing into a plasma during plasma treatment for the wafer. 
     
     
         19 . The semiconductor device manufacturing tool of  claim 15 , wherein the wet etch section comprises a feed tank configured to feed an etchant to the wet etching station, wherein the wet etch section is configured to reuse used etchant from the wet etching station. 
     
     
         20 . The semiconductor device manufacturing tool of  claim 19 , wherein the feed tank comprises:
 a first input coupled to an etchant supply and configured to accept a first etchant;   a first output coupled to an input of the wet etching station and configured to supply the first etchant to the wet etching station;   a second input coupled to an output of the wet etching station and configured to accept a used first etchant from the wet etching station; and   a third input configured to accept an oxidizer to recover the effectiveness of the used first etchant.