Methods of forming polycrystalline diamond
Abstract
A method of forming polycrystalline diamond includes providing an alloy over at least portions of a plurality of diamond particles, and subjecting the plurality of diamond particles to a high-temperature, high-pressure process to form a polycrystalline diamond material having inter-granular bonds between adjacent diamond particles. The alloy includes iridium and nickel, and a volume of the diamond particles is at least about 92% of a total volume of the alloy and the diamond particles. The polycrystalline diamond material includes at least about 92% diamond by volume. A polycrystalline diamond compact includes grains of diamond bonded to one another by inter-granular bonds and an alloy disposed within interstitial spaces between the grains of diamond. The grains of diamond occupy at least 94% by volume of the polycrystalline diamond compact. An earth-boring tool may include a bit body and such a polycrystalline diamond compact.
Claims
exact text as granted — not AI-modified1 . A method of forming polycrystalline diamond, comprising:
providing an alloy over at least portions of a plurality of diamond particles, wherein the alloy comprises iridium and nickel, and wherein a volume of the diamond particles is at least about 92% of a total volume of the alloy and the diamond particles; and subjecting the plurality of diamond particles to a high-temperature, high-pressure process to form a polycrystalline diamond material having inter-granular bonds between adjacent diamond particles, wherein the polycrystalline diamond material comprises at least about 92% diamond by volume.
2 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises covering at least 30% of a surface area of the plurality of diamond particles with the alloy.
3 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises forming a layer of the alloy having a thickness from about 1 nm to about 50 nm over the diamond particles.
4 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises providing the alloy comprising about 5 mol % iridium to about 40 mol % iridium.
5 . The method of claim 4 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises providing the alloy comprising about 10 mol % iridium to about 35 mol % iridium.
6 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises formulating the alloy to consist essentially of iridium and nickel.
7 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises formulating the alloy to exhibit a liquidus of less than about 1,600° C. at atmospheric pressure.
8 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises providing the alloy over a plurality of diamond particles having a multi-modal particle size distribution.
9 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises providing the alloy over a plurality of diamond nanoparticles.
10 . The method of claim 1 , wherein subjecting the plurality of diamond particles to the high-temperature, high-pressure process comprises subjecting the plurality of diamond particles to a temperature of at least about 1,400° C. and a pressure of at least about 5.0 GPa.
11 . The method of claim 1 , wherein subjecting the plurality of diamond particles to the high-temperature, high-pressure process comprises subjecting the plurality of diamond particles to a pressure between about 6.5 GPa and 10 GPa.
12 . The method of claim 1 , wherein providing the alloy over at least portions of the plurality of diamond particles comprises providing the alloy over at least portions of the plurality of diamond particles by a physical vapor deposition process.
13 . The method of claim 1 , wherein subjecting the plurality of diamond particles to the high-temperature, high-pressure process comprises forming the polycrystalline diamond material defining at least one void without leaching the alloy therefrom.
14 . A method of forming polycrystalline diamond, comprising:
coating a plurality of diamond particles with an alloy, wherein the alloy comprises iridium and nickel; and subjecting the plurality of diamond particles to a high-temperature, high-pressure process to form a polycrystalline diamond material having inter-granular bonds between adjacent diamond particles, wherein the polycrystalline diamond material comprises at least about 92% diamond by volume.
15 . The method of claim 14 , wherein the alloy exhibits a liquidus of less than about 2,000° C.
16 . The method of claim 14 , wherein the plurality of diamond particles define interstitial spaces between the plurality of diamond particles having a mean free path between 1 nm and 20 μm.
17 . The method of claim 16 , wherein the alloy occupies from about 10% to about 90% of a total volume of the interstitial spaces.
18 . The method of claim 14 , wherein the alloy covers at least 30% of a surface area of the plurality of diamond particles.
19 . The method of claim 14 , wherein the alloy further comprises carbon.
20 . The method of claim 14 , wherein coating the plurality of diamond particle occurs before subjecting the plurality of diamond particles to the high-temperature, high-pressure process.Join the waitlist — get patent alerts
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