US2019058142A1PendingUtilityA1
Thin film of metal oxide, organic electroluminescent device including thin film, photovoltaic cell including thin film, and manufacturing method of thin film
Assignee: JAPAN SCIENCE & TECH AGENCYPriority: Sep 18, 2014Filed: Oct 24, 2018Published: Feb 21, 2019
Est. expirySep 18, 2034(~8.1 yrs left)· nominal 20-yr term from priority
Inventors:Hideo HosonoYoshitake TodaSatoru WatanabeToshinari WatanabeKazuhiro ItoNaomichi MiyakawaNobuhiro Nakamura
H10P 14/3434H10P 14/22C23C 14/352Y02E10/549H01J 37/3429C23C 14/086C23C 14/3414C23C 14/3407H01L 51/5072H01L 51/5092H01L 2251/303H01L 2251/306H01L 31/0324H01L 51/5096H01L 51/4233Y02P70/521H01L 2031/0344C23C 14/08H10K 30/50H10K 30/152H10F 71/00H10F 77/12H10F 77/127H10K 50/16H10F 77/169H10K 2102/102H10K 2102/00H10K 50/171Y02P70/50
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Claims
Abstract
A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is greater than 15 mol % but less than or equal to 95 mol %.
Claims
exact text as granted — not AI-modified1 .- 3 . (canceled)
4 . An organic electroluminescent device, comprising at least one layer selected from the group consisting of an electron injection layer and a hole blocking layer, wherein:
the at least one layer is a thin film of metal oxide comprising zinc (Zn), tin (Sn), and oxygen (O); and in terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO 2 is present in the thin film in an amount of greater than 15 mol % but less than or equal to 95 mol %.
5 . The organic electroluminescent device according to claim 4 , wherein the thin film comprises silicon (Si).
6 . The organic electroluminescent device according to claim 5 , wherein in terms of oxide, based on 100 mol % of total of the oxides of the thin film, SiO 2 is present in the thin film in an amount of greater than or equal to 7 mol % but less than or equal to 30 mol %.
7 . The organic electroluminescent device according to claim 4 , wherein the thin film is substantially free of silicon (Si).
8 . The organic electroluminescent device according to claim 4 , wherein a thickness of the thin film is greater than or equal to 10 nm but less than or equal to 2000 nm.
9 .- 15 . (canceled)Join the waitlist — get patent alerts
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