Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

1 . A semiconductor device comprising:
 a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film, the first and second fin-type patterns each extending in a first direction;   a gate structure that intersects the first fin-type pattern and the second fin-type pattern;   a first epitaxial layer on the first fin-type pattern on at least one side of the gate structure;   a second epitaxial layer on the second fin-type pattern on at least one side of the gate structure; and   a metal contact which covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer,   wherein the first epitaxial layer directly contacts the second epitaxial layer.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the metal contact comprises a first portion which directly contacts side walls of the gate structure, and a second portion which is spaced apart from the side walls of the gate structure on top of the first portion. 
     
     
         3 . The semiconductor device of  claim 2 , wherein at an interface between the first portion and the second portion, a width of the first portion is greater than a width of the second portion. 
     
     
         4 . (canceled) 
     
     
         5 . The semiconductor device of  claim 2 , wherein a part of the second portion is located below an upper surface of the gate structure. 
     
     
         6 . The semiconductor device of  claim 1 , further comprising:
 a protruding space between the field insulating film and the first and second epitaxial layers, the protruding space comprising an insulating material, a metal material or an air gap.   
     
     
         7 . (canceled) 
     
     
         8 . The semiconductor device of  claim 1 , further comprising:
 a third epitaxial layer which completely covers the outer circumferential surfaces of the first and second the epitaxial layers,   wherein the first epitaxial layer and the second epitaxial layer include the same material, and   the third epitaxial layer comprises a material different from the first and second epitaxial layers.   
     
     
         9 . A semiconductor device comprising:
 a first fin-type pattern extending in a first direction on a substrate;   a gate structure which intersects the first fin-type pattern;   a first epitaxial layer on the first fin-type pattern on at least one side of the gate structure; and   a metal contact which includes a first portion that directly contacts side walls of the gate structure, and a second portion that is spaced apart from the side walls of the gate structure on top of the first portion,   wherein the first portion directly contacts the first epitaxial layer,   a width of the first portion is greater than a width of the second portion at an interface between the first portion and the second portion, and   the first and second portions are materially of the same composition.   
     
     
         10 . (canceled) 
     
     
         11 . The semiconductor device of  claim 9 , further comprising:
 an interlayer insulating film which covers the gate structure and the first epitaxial layer,   wherein the interlayer insulating film does not contact the first epitaxial layer.   
     
     
         12 . (canceled) 
     
     
         13 . The semiconductor device of  claim 11 , further comprising:
 a barrier metal which is between the metal contact and the first epitaxial layer and between the metal contact and the interlayer insulating film.   
     
     
         14 . The semiconductor device of  claim 13 , wherein the barrier metal comprises a first part which is in contact with the first epitaxial layer, and a second part which is in contact with the interlayer insulating film, and
 the first part and the second part have compositions different from each other.   
     
     
         15 . The semiconductor device of  claim 9 , wherein the metal contact completely surrounds the outer circumferential surface of the first epitaxial layer. 
     
     
         16 . (canceled) 
     
     
         17 . The semiconductor device of  claim 15 , wherein the first epitaxial layer comprises Si and/or SiC, and
 the semiconductor device is an NMOS transistor.   
     
     
         18 . The semiconductor device of  claim 9 , further comprising:
 a second epitaxial layer which covers a first area of the first epitaxial layer,   wherein the metal contact covers an upper surface of the second epitaxial layer.   
     
     
         19 .- 21 . (canceled) 
     
     
         22 . The semiconductor device of  claim 9 , further comprising:
 a second epitaxial layer which completely covers an outer circumferential surface of the first epitaxial layer,   wherein the second epitaxial layer comprises a material different from the first epitaxial layer.   
     
     
         23 .- 24 . (canceled) 
     
     
         25 . The semiconductor device of  claim 9 , wherein, in the metal contact, the first portion and the second portion are integrally formed. 
     
     
         26 . A semiconductor device comprising:
 a first fin-type pattern which protrudes upwardly from an upper surface of a field insulating film;   a first epitaxial layer on the first fin-type pattern;   an interlayer insulating film on the field insulating film that covers the first fin-type pattern and the first epitaxial layer; and   a metal contact which includes a first portion and a second portion on the first portion,   wherein the first portion extends along an outer circumferential surface of the first epitaxial layer within the interlayer insulating film, and directly contacts the field insulating film,   an upper surface of the second portion being coplanar with an upper surface of the interlayer insulating film, and   the first and second portions are materially of the same composition.   
     
     
         27 . The semiconductor device of  claim 26 , further comprising:
 a barrier metal between the metal contact and the first epitaxial layer, and between the metal contact and the interlayer insulating film.   
     
     
         28 . The semiconductor device of  claim 27 , wherein the barrier metal comprises a first area which is in contact with the first epitaxial layer, and a second area which is in contact with the interlayer insulating film, and
 the first area and the second area have compositions different from each other.   
     
     
         29 . The semiconductor device of  claim 26 , further comprising:
 a second epitaxial layer which completely covers the outer circumferential surface of the first epitaxial layer,   wherein the second epitaxial layer comprises a material different from the first epitaxial layer.   
     
     
         30 . The semiconductor device of  claim 29 , wherein the metal contact completely covers the outer circumferential surface of the second epitaxial layer. 
     
     
         31 .- 39 . (canceled)