Optoelectronic semiconductor chip

Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1 b . The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

What is claimed is: 
     
         1 . A method of producing an optoelectronic semiconductor chip, comprising:
 providing a semiconductor body of semiconductor material in an epitaxial layer, wherein the semiconductor body comprises an active layer, a p-side and an n-side, wherein the active layer is arranged between the p-side and the n-side;   providing a p-contact layer that is capable of electrically contacting the p-side of the semiconductor body; and   providing an n-contact layer that is capable of electrically contacting the n-side of the semiconductor body, wherein the n-contact layer comprises a TCO-layer and a mirror layer, and the TCO-layer is arranged between the n-side of the semiconductor body and the mirror layer.   
     
     
         2 . The method according to  claim 1 , wherein the n-contact layer passes to the n-side by means of a hole through the p-contact layer and through the p-side of the semiconductor body. 
     
     
         3 . The method according to  claim 2 , wherein the TCO-layer is arranged directly on the hole. 
     
     
         4 . The method according to  claim 3 , wherein the TCO-layer closes off the hole. 
     
     
         5 . The method according to  claim 2 , wherein the hole is lined with an electrically insulating layer, the electrically insulating layer directly adjoining the TCO-layer. 
     
     
         6 . The method according to  claim 1 , wherein the TCO-layer is applied to form an ohmic contact on the n-side. 
     
     
         7 . The method according to  claim 1 , wherein the mirror layer comprises silver. 
     
     
         8 . The method according to  claim 1 , wherein the p-contact layer and the n-contact layer are arranged on the same side of the semiconductor body. 
     
     
         9 . The method according to  claim 8 , wherein the p-contact layer directly adjoins the p-side of the semiconductor body;
 wherein the n-contact layer is arranged on a side of the p-contact layer that is remote from the semiconductor body; and   wherein the semiconductor body further comprises an electrically insulating layer that is arranged between the p-contact layer and the n-contact layer.   
     
     
         10 . The method according to  claim 1 , wherein the TCO-layer comprises ZnO or ITO. 
     
     
         11 . The method according to  claim 1 , wherein the TCO-layer has a thickness of greater than 0.5 nm. 
     
     
         12 . The method according to  claim 1 , wherein the TCO-layer has a thickness in a range of between 15 nm and 25 nm inclusive. 
     
     
         13 . The method according to  claim 1 , wherein the semiconductor body has oblique side faces. 
     
     
         14 . The method according to  claim 1 , wherein the semiconductor body is based on GaN. 
     
     
         15 . The method according to  claim 1 , wherein providing the semiconductor body comprises:
 growing, epitaxially, the semiconductor body on a growth substrate; and   detaching the semiconductor body from the growth substrate.   
     
     
         16 . An optoelectronic semiconductor chip, comprising:
 a semiconductor body;   a p-contact layer; and   an n-contact layer;   wherein the semiconductor body comprises an active layer, a p-side, and an n-side, wherein the active layer is arranged between the p-side and the n-side;   wherein the n-contact layer comprises a TCO-layer and a mirror layer;   wherein the TCO-layer is arranged between the n-side of the semiconductor body and the mirror layer; and   wherein the mirror layer is not in direct contact with the semiconductor body.   
     
     
         17 . The optoelectronic semiconductor chip according to  claim 16 , wherein the TCO-layer is in direct contact with the semiconductor body and the mirror layer. 
     
     
         18 . The optoelectronic semiconductor chip according to  claim 16 , wherein the TCO-layer comprises ZnO or ITO. 
     
     
         19 . The optoelectronic semiconductor chip according to  claim 16 , wherein the TCO-layer has a thickness of greater than 0.5 nm. 
     
     
         20 . The optoelectronic semiconductor chip according to  claim 16 , wherein the TCO-layer has a thickness in a range of between 15 nm and 25 nm inclusive.