US2019035837A1PendingUtilityA1

Solid image-pickup device with flexible circuit substrate

Assignee: SONY CORPPriority: Oct 4, 2001Filed: Oct 1, 2018Published: Jan 31, 2019
Est. expiryOct 4, 2021(expired)· nominal 20-yr term from priority
Inventors:Yukinobu Wataya
H10W 90/754H10W 72/5525H01L 27/1469H01L 27/14607H01L 27/14618H01L 2224/48091H01L 27/1462H01L 27/14636H01L 2224/45147H01L 31/02002H01L 27/14632H01L 2924/00011H01L 2224/48227H01L 27/14643H01L 27/14634H10F 39/809H04N 23/00H10F 39/018H10F 39/026H10F 39/804H10F 39/8027H10F 39/811H10F 77/93H10F 39/805H10F 39/18H10W 74/111H10W 76/10
60
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Claims

Abstract

A solid image-pickup device has a semiconductor substrate, which includes an image-pickup area having a plurality of light sensors arranged thereon. A transparent plate having the same shape and the same size as those of the semiconductor substrate when viewed as a plan view is bonded to the surface of the semiconductor substrate. Also, a through hole extends from the second side of the semiconductor device towards the first side. An electrically conductive material is located in the through hole. Additionally, the electrically conductive material is physically connected to at least a portion of a lower surface of a laminar layer portion comprising at least one conductive layer located at the first side of the semiconductor substrate and is electrically connected to the laminar layer portion.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An imaging device, comprising:
 a semiconductor substrate having a first side as a light incident side and a second side opposite the first side;   an image pick-up area disposed in a central area of the semiconductor substrate and having at least one light sensor;   at least one through hole disposed in an edge area of the semiconductor substrate and extending from the second side towards the first side;   a transparent plate disposed along the first side;   a cavity disposed between the transparent plate and the image pick-up area, and a disposed over the central area of the semiconductor substrate;   an insulating film covering inner side surfaces of the at least one through hole; and   an electrically conductive material disposed in the through hole so as to cover inner side surfaces of the insulating film, wherein the electrically conductive material is physically connected to at least a portion of a wiring located on the second side and is electrically connected to the wiring.   
     
     
         2 . The imaging device according to  claim 1 , wherein the transparent plate has substantially the same shape and substantially the same size as the semiconductor substrate from a plan view perspective. 
     
     
         3 . The imaging device according to  claim 1 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over the edge area of the semiconductor substrate, thus forming the cavity surrounded by said sealing agent and being sealed airtight. 
     
     
         4 . The imaging device according to  claim 1 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over both the edge area and the central area of the semiconductor substrate, thus filling the cavity with the sealing agent. 
     
     
         5 . The imaging device according to  claim 1 , wherein a portion of the electrically conductive material covers a portion of the second side. 
     
     
         6 . The imaging device according to  claim 1 , wherein the transparent plate is made of a glass. 
     
     
         7 . The imaging device according to  claim 1 , wherein the through hole has a depth of 100 μm or less. 
     
     
         8 . The imaging device according to  claim 1 , wherein the wiring is an external lead wire for the imaging device. 
     
     
         9 . The imaging device according to  claim 1 , further comprising a non-conductive material disposed between the wiring and the semiconductor substrate. 
     
     
         10 . The imaging device according to  claim 1 , wherein the insulating film extends along the second side of the semiconductor substrate. 
     
     
         11 . An optical apparatus comprising:
 a lens block; and   an imaging device including:
 a semiconductor substrate having a first side as a light incident side and a second side opposite the first side; 
 an image pick-up area disposed in a central area of the semiconductor substrate and having at least one light sensor; 
 at least one through hole disposed in an edge area of the semiconductor substrate and extending from the second side towards the first side; 
 a transparent plate disposed along the first side; 
 a cavity disposed between the transparent plate and the image pick-up area, and a disposed over the central area of the semiconductor substrate; 
 an insulating film covering inner side surfaces of the at least one through hole; and 
 an electrically conductive material disposed in the through hole so as to cover inner side surfaces of the insulating film, wherein the electrically conductive material is physically connected to at least a portion of a wiring located on the second side and is electrically connected to the wiring. 
   
     
     
         12 . The optical apparatus according to  claim 11 , wherein the transparent plate has substantially the same shape and substantially the same size as the semiconductor substrate from a plan view perspective. 
     
     
         13 . The optical apparatus according to  claim 11 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over the edge area of the semiconductor substrate, thus forming the cavity surrounded by said sealing agent and being sealed airtight. 
     
     
         14 . The optical apparatus according to  claim 11 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over both the edge area and the central area of the semiconductor substrate, thus filling the cavity with the sealing agent. 
     
     
         15 . The optical apparatus according to  claim 11 , wherein a portion of the electrically conductive material covers a portion of the second side. 
     
     
         16 . The optical apparatus according to  claim 11 , wherein the transparent plate is made of a glass. 
     
     
         17 . The optical apparatus according to  claim 11 , wherein the through hole has a depth of 100 μm or less. 
     
     
         18 . The optical apparatus according to  claim 11 , wherein the wiring is an external lead wire for the imaging device. 
     
     
         19 . The optical apparatus according to  claim 11 , further comprising a non-conductive material disposed between the wiring and the semiconductor substrate. 
     
     
         20 . The optical apparatus according to  claim 11 , wherein the insulating film extends along the second side of the semiconductor substrate.

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