Method and system for forming memory fin patterns

Abstract

Techniques disclosed herein, provide a method and fabrication structure for accurately increasing feature density for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. A multiline layer is formed of three or more different materials that provide differing etch characteristics. Etch masks, including interwoven etch masks, are used to selectively etch cuts within selected, exposed materials. Structures can then be cut and formed. Forming structures and cuts can be recorded in a memorization layer, which can also be used as an etch mask.

1 . A method for patterning a substrate, the method comprising:
 forming a multi-line layer above a memorization layer on a substrate, the multi-line layer including a region having a pattern of alternating lines of materials that differ chemically from each other by having different etch resistivities relative to each other, the materials include material A, material B, and material C, the pattern of alternating lines alternate in a direction parallel to a working surface of the substrate;   forming a first etch mask above the multi-line layer;   etching through uncovered portions of material A and portions of the memorization layer directly underneath the uncovered portions of material A using the first etch mask;   forming a second etch mask above the multi-line layer; and   etching through uncovered portions of material C and portions of the memorization layer directly underneath the uncovered portions of material C using the second etch mask.   
     
     
         2 . The method of  claim 1 , further comprising: etching through material B and portions of the memorization layer directly underneath material B while the multi-line layer is uncovered. 
     
     
         3 . The method of  claim 2 , further comprising:
 removing remaining materials above the memorization layer after completing etch transfers based on etching through material A, material B, and material C, the memorization layer resulting in a relief pattern having an array of parallel line segments.   
     
     
         4 . The method of  claim 2 , wherein parallel line segments of the array of parallel line segments have a pitch less than  40  nanometers. 
     
     
         5 . The method of  claim 2 , wherein line cuts are created in the memorization layer prior to creating lines in the memorization layer, and wherein the memorization layer comprises a hardmask material. 
     
     
         6 . The method of  claim 2 , wherein one or more lines of the multi-line layer are formed by self-aligned double patterning or self-aligned quadruple patterning. 
     
     
         7 . The method of  claim 2 , further comprising:
 transferring the relief pattern having the array of parallel line segments into an underlying layer such that an array of fins are created in the underlying layer.   
     
     
         8 . The method of  claim 2 , wherein etching through material B occurs subsequent to etching through material A and etching through material C. 
     
     
         9 . The method of  claim 2 , wherein etching through material B occurs prior to etching through material A and etching through material C. 
     
     
         10 . The method of  claim 1 , further comprising forming a hardmask layer above the multi-line layer prior to forming the first etch mask and forming the second etch mask; and;
 etching through corresponding portions of the hardmask layer using the first etch mask and the second etch mask.   
     
     
         11 . The method of  claim 10 , wherein forming the first etch mask includes depositing a radiation-sensitive material on the substrate, and developing the radiation-sensitive material after photolithographic exposure;
 wherein forming the second etch mask includes depositing a second radiation-sensitive material on the substrate, and developing the second radiation-sensitive material after photolithographic exposure; and   further comprising, prior to depositing the second radiation-sensitive material, and subsequent to etching through the uncovered portions of material A and portions of the memorization layer directly underneath the uncovered portions of material A, filling openings in the memorization layer and in the multi-line layer with material C.   
     
     
         12 . The method of  claim 11 , further comprising, prior to etching through material B and portions of the memorization layer directly underneath material B, filling openings in the memorization layer and in the multi-line layer. 
     
     
         13 . The method of  claim 1 , wherein forming the first etch mask includes:
 forming bilayer mandrels that have an upper material and a lower material, the upper material having a different etch resistivity as compared to the lower material;   forming sidewall spacers on the bilayer mandrels, an array of the bilayer mandrels and the sidewall spacers defining trenches between exposed sidewalls of adjacent sidewall spacers.   
     
     
         14 . The method of  claim 13 , wherein forming the second etch mask includes:
 filling the defined trenches between the adjacent sidewall spacers of the first etch mask;   removing the upper material of the bilayer mandrels such that the lower material is uncovered; and   removing the lower material of the bilayer mandrels.   
     
     
         15 . The method of  claim 1 , wherein forming the multi-line layer above the memorization layer includes:
 forming mandrels using material A;   forming sidewall spacers on sidewalls of mandrels using material B; and   forming fill structures using material C, the fill structures filling trenches between adjacent spacers.   
     
     
         16 . The method of  claim 15 , wherein a first pitch between lines of material B is less than 40 nanometers, and wherein a second pitch between the mandrels and the fill structures is less than 40 nanometers. 
     
     
         17 . A method for patterning a substrate, the method comprising:
 forming a multi-line layer above a memorization layer on a substrate, the multi-line layer including a region having a pattern of alternating lines of materials that differ chemically from each other by having different etch resistivities relative to each other, alternating lines includes mandrels, sidewall spacers, and fill structures, the pattern of alternating lines includes alternating lines of the mandrels and lines of the fill structures with the sidewall spacers positioned between lines of the mandrels and lines of the fill structures;   forming a first etch mask above the multi-line layer;   etching through uncovered portions of mandrels and portions of the memorization layer directly underneath the uncovered portions of mandrels using the first etch mask;   forming a second etch mask above the multi-line layer;   etching through uncovered portions of the fill structures and portions of the memorization layer directly underneath the uncovered portions of the fill structures using the second etch mask; and   etching through the sidewall spacers and portions of the memorization layer directly underneath the sidewall spacers with the multi-line layer uncovered.   
     
     
         18 . The method of  claim 17 , further comprising:
 removing remaining materials above the memorization layer after completing etch transfers based on etching through the mandrels, the fill structures, and the sidewall spacers, the memorization layer being a relief pattern having an array of parallel line segments; and   transferring the relief pattern having the array of parallel line segments into an underlying layer such that an array of fins is created in the underlying layer.   
     
     
         19 . A method of patterning a substrate, the method comprising:
 creating a fin array pattern in a memorization layer by:   forming a first composite etch mask that includes a first etch mask positioned on a multi-line layer, and selectively etching through a first material of the multi-line layer and into a memorization layer underlying the multi-line layer using the first composite etch mask;   subsequent to etching the first material, forming a second composite etch mask that includes a second etch mask positioned on the multi-line layer, and selectively etching through a second material of the multi-line layer and into the memorization layer using the second composite etch mask; and   subsequent to etching the second material, selectively etching through a third material of the multi-line layer and into the memorization layer without the multi-line layer being covered.