Method of manufacturing semiconductor device and semiconductor device

Abstract

A performance of a semiconductor device is improved. A method of manufacturing a semiconductor device according to one embodiment includes a step of mounting a cover member via a bonding material on an upper surface of a frame member fixed on a wiring substrate, and a step of curing the bonding material by irradiating the bonding material mounted on the frame member with an ultraviolet ray. The wiring substrate has a base member and an insulating film covering the base member, and the frame member and a semiconductor chip are mounted (fixed) onto an upper surface of the insulating film. The frame member contains glass fibers. Moreover, a roughness of the upper surface of the frame member is equal to or less than a roughness of the upper surface of the insulating film.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device includes the following steps:
 (a) a step of preparing a wiring substrate including a base member that has a first upper surface and a first lower surface opposite to the first upper surface and that is comprised of an insulating material, a first terminal formed on the first upper surface of the base member, and a first insulating film that has a second lower surface facing to the first upper surface and a second upper surface opposite to the second lower surface and that is formed on the first upper surface such that the first terminal is exposed, wherein:   a frame member having a third lower surface and a third upper surface opposite to the third lower surface is fixed on the second upper surface of the first insulating film via a first bonding material while the second upper surface and the third lower surface face to each other,   a first member covering the third upper surface is disposed on the third upper surface of the frame member, and   the frame member is comprised of a first resin containing glass fibers,   (b) after the step (a), a step of fixing a semiconductor chip having a main surface that has a light-receiving part and a rear surface opposite to the main surface, in a region surrounded by the frame member of the second upper surface via a die bonding material such that the rear surface faces to the second upper surface; having a fourth lower surface and a fourth upper surface opposite to the fourth lower surface, on a fifth upper surface of the first member via a second bonding material such that the fourth lower surface faces to the second upper surface and such that the semiconductor chip is covered; and   (c) after the step (b), a step of curing the second bonding material by irradiating the second bonding material with an ultraviolet ray.   
     
     
         2 . The method of manufacturing the semiconductor device according to  claim 1 ,
 wherein the step (a) includes the steps of:   (a1) immersing a glass fiber sheet in a resin layer such that the glass fiber sheet is impregnated with the first resin;   (a2) after the step (a1), sandwiching a resin member containing the glass fiber sheet by a first metal film and a second metal film, and press-bonding the first metal film, the second metal film and the resin member with one another; and   (a3) removing each of the first metal film and the second metal film after the resin member has been cured such that the third upper surface and the third lower surface are exposed.   
     
     
         3 . The method of manufacturing the semiconductor device according to  claim 1 ,
 wherein the wiring substrate includes a second terminal formed on the first lower surface of the base member, and   the method further includes the step of:   (d) after the step (c), joining a solder ball to the second terminal.   
     
     
         4 . The method of manufacturing the semiconductor device according to  claim 1 ,
 wherein the first insulating film does not contain the glass fibers.