Plasma resistant semiconductor processing chamber components

Abstract

Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.

I/We claim: 
     
         1 . A component of a semiconductor processing apparatus, wherein a surface of the component is resistant to a halogen-comprising reactive plasma, the component comprising:
 a solid structure having an overall uniform composition, wherein the composition comprises:
 crystal grains selected from a group consisting of yttrium oxide, yttrium fluoride and yttrium oxyfluoride, and 
 at least one additional compound selected from a group consisting of an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium and combinations of an oxide, fluoride or oxyfluoride of at least one of these elements. 
   
     
     
         2 . The component of  claim 1 , wherein the composition further comprises an amorphous phase comprising yttrium and fluorine. 
     
     
         3 . The component of  claim 1 , wherein the composition comprises a yttrium aluminum oxyfluoride (Y—Al—O—F) amorphous phase. 
     
     
         4 . The component of  claim 1 , wherein the composition comprises a yttrium oxide. 
     
     
         5 . The component of  claim 1 , wherein in the composition comprises a yttrium fluoride. 
     
     
         6 . The component of  claim 1 , wherein the composition comprises a yttrium oxyfluoride. 
     
     
         7 . The component of  claim 1 , wherein the at least one additional compound comprises aluminum oxide, aluminum fluoride or aluminum oxyfluoride. 
     
     
         8 . The component of  claim 1 , wherein the at least one additional compound comprises zirconium oxide, zirconium fluoride or zirconium oxyfluoride. 
     
     
         9 . The component of  claim 1 , wherein the at least one additional compound comprises an oxide, fluoride or oxyfluoride of neodymium, cerium, samarium, erbium, scandium, lanthanum, hafnium, niobium, ytterbium or hafnium. 
     
     
         10 . The component in accordance with  claim 1 , wherein the component is selected from a group consisting of a shower head for gas distribution, a process chamber lid interior, a process chamber liner and an electrostatic chuck. 
     
     
         11 . A component of a processing apparatus, comprising:
 a solid structure having a surface resistant to a halogen-comprising reactive plasma, wherein the composition comprises:
 crystal grains selected from a group consisting of yttrium oxide, yttrium fluoride, and yttrium oxyfluoride, and 
 at least one additional compound selected from a group consisting of erbium oxide, erbium fluoride, erbium oxyfluoride, aluminum oxide, aluminum fluoride, aluminum oxyfluoride, hafnium oxide, hafnium fluoride, hafnium oxyfluoride, zirconium oxide, zirconium fluoride, zirconium oxyfluoride, and combinations thereof. 
   
     
     
         12 . The component of  claim 11 , wherein the composition further comprises an amorphous phase comprising yttrium and fluorine. 
     
     
         13 . The component of  claim 11 , wherein the composition comprises a yttrium aluminum oxyfluoride (Y—Al—O—F) amorphous phase. 
     
     
         14 . The component of  claim 11 , wherein the composition comprises a yttrium oxide. 
     
     
         15 . The component of  claim 11 , wherein in the composition comprises a yttrium fluoride. 
     
     
         16 . The component of  claim 11 , wherein the composition comprises a yttrium oxyfluoride. 
     
     
         17 . The component of  claim 11 , wherein the at least one additional compound comprises aluminum oxide, aluminum fluoride or aluminum oxyfluoride. 
     
     
         18 . The component of  claim 11 , wherein the at least one additional compound comprises zirconium oxide, zirconium fluoride or zirconium oxyfluoride. 
     
     
         19 . The component in accordance with  claim 11 , wherein the component is selected from a group consisting of a shower head for gas distribution, a process chamber lid interior, a process chamber liner and an electrostatic chuck. 
     
     
         20 . The component in accordance with  claim 11 , wherein the composition comprises about 22 molar % Y—Al—O—F amorphous phase.