Photosensitive transfer material, pattern formation method, and etching method

Abstract

A photosensitive transfer material including a support and a photosensitive resin composition layer, in which the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B), and the photosensitive resin composition layer does not have an ethylenic crosslinking structure is a positive-type material, is excellent in terms of heat-resistant rectangular properties, etchant resistance, and resist peeling properties, and generates only a small amount of dust during processes; a pattern formation method, and an etching method.

1 . A photosensitive transfer material comprising:
 a support; and   a photosensitive resin composition layer,   wherein the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B);   the photosensitive resin composition layer does not have an ethylenic crosslinking structure; and   the polymer component (A) including a polymer having the constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group is a polymer component including a polymer having a constituent unit represented by General Formula (A1) or General Formula (A1′) below:   
       
         
           
           
               
               
           
         
         in General Formula (A1), each of R 1  and R 2  independently represents a hydrogen atom, an alkyl group, or an aryl group, either or both R 1  and R 2  is an alkyl group or an aryl group, R 3  represents an alkyl group or an aryl group, R 1  or R 2  and R 3  may be combined together so as to form a cyclic ether, and R 4  represents a hydrogen atom or a methyl group, 
       
       
         
           
           
               
               
           
         
         in General Formula (A1′), each of R 11  and R 12  independently represents a hydrogen atom, an alkyl group, or an aryl group, either or both R 11  and R 12  is an alkyl group or an aryl group, R 13  represents an alkyl group or an aryl group, R 11  or R 12  and R 13  may be combined together so as to form a cyclic ether, and each of R 14 s independently represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group, a hydroxyalkyl group, an aryl carbonyl group, or a cycloalkyl group. 
       
     
     
         2 . (canceled) 
     
     
         3 . The photosensitive transfer material according to  claim 1 ,
 wherein the photosensitive resin composition layer includes a heterocyclic compound (C).   
     
     
         4 . The photosensitive transfer material according to  claim 3 ,
 wherein a content of the heterocyclic compound (C) is in a range of 0.1% by mass to 10% by mass of a total solid content amount of the photosensitive resin composition layer.   
     
     
         5 . The photosensitive transfer material according to  claim 3 ,
 wherein the heterocyclic compound (C) includes an epoxy group.   
     
     
         6 . (canceled) 
     
     
         7 . The photosensitive transfer material according to  claim 1 ,
 wherein the polymer component (A) in the photosensitive resin composition layer includes two or more kinds of polymers having the constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group, and includes a polymer having a constituent unit represented by General Formula (A2′) represented below as one of the two or more kinds of polymers having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group:   
       
         
           
           
               
               
           
         
         in General Formula (A2′), each of R 31  and R 32  independently represents a hydrogen atom, an alkyl group, or an aryl group, either or both R 31  and R 32  is an alkyl group or an aryl group, R 33  represents an alkyl group or an aryl group, R 31  or R 32  and R 33  may be combined together so as to form a cyclic ether, R 34  represents a hydrogen atom or a methyl group, and X 0  represents a single bond or an arylene group. 
       
     
     
         8 . The photosensitive transfer material according to  claim 1 ,
 wherein a film thickness of the photosensitive resin composition layer is in a range of 0.5 μm to 10 μm.   
     
     
         9 . The photosensitive transfer material according to  claim 1 , further comprising:
 a sensitizer in the photosensitive resin composition layer.   
     
     
         10 . The photosensitive transfer material according to  claim 1 , further comprising:
 a basic compound in the photosensitive resin composition layer.   
     
     
         11 . The photosensitive transfer material according to  claim 1 , further comprising:
 a protective film for the photosensitive resin composition layer.   
     
     
         12 . The photosensitive transfer material according to  claim 1 ,
 wherein the photosensitive transfer material is a photosensitive transfer material for forming a removable etching resist.   
     
     
         13 . A pattern formation method comprising:
 a step of providing a photosensitive transfer material;   a photosensitive resin composition layer formation step of forming a photosensitive resin composition layer on at least one surface of a substrate using the photosensitive transfer material;   an exposure step of exposing the photosensitive resin composition layer; and   a development step of developing the exposed photosensitive resin composition layer,   wherein the photosensitive transfer material comprises:   a support; and   a photosensitive resin composition layer,   wherein the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B);   the photosensitive resin composition layer does not have an ethylenic crosslinking structure; and   the polymer component (A) including a polymer having the constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group is a polymer component including a polymer having a constituent unit represented by General Formula (A1) or General Formula (A1′) below:   
       
         
           
           
               
               
           
         
         in General Formula (A1), each of R 1  and R 2  independently represents a hydrogen atom, an alkyl group, or an aryl group, either or both R 1  and R 2  is an alkyl group or an aryl group, R 3  represents an alkyl group or an aryl group, R 1  or R 2  and R 3  may be combined together so as to form a cyclic ether, and R 4  represents a hydrogen atom or a methyl group, 
       
       
         
           
           
               
               
           
         
         in General Formula (A1′), each of R 11  and R 12  independently represents a hydrogen atom, an alkyl group, or an aryl group, either or both R 11  and R 12  is an alkyl group or an aryl group, R 13  represents an alkyl group or an aryl group, R 11  or R 12  and R 13  may be combined together so as to form a cyclic ether, and each of R 14 s independently represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group, a hydroxyalkyl group, an aryl carbonyl group, or a cycloalkyl group. 
       
     
     
         14 . The pattern formation method according to  claim 13 , further comprising:
 a post-baking step of heating a pattern image made of the photosensitive resin composition layer obtained by means of development.   
     
     
         15 . An etching method comprising:
 a step of carrying out etching using a pattern produced using the pattern formation method according to  claim 13  as an etching resist; and   a step of removing the pattern through a chemical treatment after an etching treatment.