US2019006605A1PendingUtilityA1
Germanane analogs and optoelectronic devices using the same
Assignee: OHIO STATE INNOVATION FOUNDATIONPriority: Apr 22, 2013Filed: Aug 10, 2018Published: Jan 3, 2019
Est. expiryApr 22, 2033(~6.7 yrs left)· nominal 20-yr term from priority
B82Y 30/00B82Y 20/00Y10S977/95C01B 6/06C01G 19/00C07F 7/2208B82Y 40/00Y10S977/933Y10S977/896Y10S977/758Y10S977/788C01G 17/00Y02E10/549H01L 51/42H01L 31/035209H01L 29/24H01L 31/032H01L 51/50H01L 51/005H01L 33/26H01L 51/0558C07F 7/30H01L 51/0077H01L 29/0665H01L 33/04H10D 62/881H10K 30/50H10K 85/30H10D 62/118H10D 62/80H10H 20/822H10H 20/811H10F 77/143H10F 77/12H10K 85/60H10K 30/00H10K 10/484H10K 50/00
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Claims
Abstract
The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
Claims
exact text as granted — not AI-modified1 - 20 . (canceled)
21 . A method of synthesizing M-R comprising:
a. reacting A-M 2 with R—X to form M-R; wherein A is an alkaline earth metal; wherein M is Ge or Sn; wherein X is a halogen; and wherein R is C 1-18 alkyl or H.
22 . The method of claim 21 , wherein R is H or CH 3 .
23 . The method of claim 21 , wherein the reaction occurs in the absence of solvent.
24 . The method of claim 21 , wherein the reaction occurs in the presence of a solvent.
25 - 26 . (canceled)
27 . The method of claim 21 , wherein M is Ge.
28 . The method of claim 21 , wherein R is CH 3 .Join the waitlist — get patent alerts
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