Method for fabricating a phase-change memory cell

Abstract

A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer.

What is claimed is: 
     
         1 . A method of forming a memory cell, the method comprising:
 forming a selector device on a substrate;   forming a metal plug to couple to a contact of the selector device of the memory cell;   forming an oxygen-free layer on exposed portions of the metal plug to prevent oxidation of the metal plug;   forming a dielectric layer on the oxygen-free layer;   forming a phase-change material layer on the dielectric layer; and   forming a contact region disposed within the dielectric layer and between the phase-change material layer and the metal plug by
 determining a set-state target current for the phase-change material layer, and 
 applying, through the metal plug, a current pulse greater than the set-state target current; and 
   subsequent to applying the current pulse greater than the set-state target current, making a determination of an actual amount of current driven by the phase-change memory cell in a crystalline state.