Data storage devices and methods for manufacturing the same

Abstract

A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

What is claimed is: 
     
         1 . A device comprising:
 a substrate;   a first interlayer insulating layer disposed on the substrate;   a contact plug disposed in the first interlayer insulating layer;   a magnetic tunnel junction layer disposed on the contact plug; and   a sidewall insulating pattern disposed on a sidewall of the magnetic tunnel junction layer,   wherein the magnetic tunnel junction pattern includes a first magnetic layer, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer, and   a thickness of an edge portion of the tunnel barrier layer is greater than a thickness of a center portion of the tunnel barrier layer.   
     
     
         2 . The device of  claim 1 , further comprising a capping layer disposed on the first interlayer insulating layer and on the sidewall insulating pattern. 
     
     
         3 . The device of  claim 1 , further comprising:
 a lower conductive layer disposed between the conductive plug and the first magnetic layer; and   an upper conductive layer disposed on the second magnetic layer.   
     
     
         4 . The device of  claim 3 , further comprising:
 a mask layer disposed on the upper conductive layer;   a second interlayer insulating layer disposed on the capping layer; and   a conductive line disposed on the second interlayer insulating layer.   
     
     
         5 . The device of  claim 1 , wherein the contact plug penetrates the first interlayer insulating layer. 
     
     
         6 . The device of  claim 1 , wherein the tunnel barrier layer includes at least one of a magnesium oxide (MgO) layer, a titanium oxide (TiO) layer, an aluminum oxide (AlO) layer, a magnesium zinc oxide (MgZnO) layer and a magnesium boron oxide (MgBO) layer. 
     
     
         7 . The device of  claim 1 , wherein the sidewall insulating pattern includes at least one of silicon oxide, silicon nitride, silicon carbide and aluminum oxide. 
     
     
         8 . The device of  claim 1 , wherein the capping layer includes silicon oxide, silicon nitride or silicon oxynitride. 
     
     
         9 . The device of  claim 1 , wherein a thickness of a middle portion of the sidewall insulating pattern is greater than a thickness of an upper portion of the sidewall insulating pattern, and greater than a thickness of a lower portion of the sidewall insulating pattern. 
     
     
         10 . The device of  claim 1 , wherein a first surface of the sidewall insulating pattern includes a point at which a slope of the first surface of the sidewall insulating pattern changes. 
     
     
         11 . A data storage device comprising:
 a substrate;   an interlayer insulating layer disposed on the substrate;   a contact plug disposed in the interlayer insulating layer;   a magnetic tunnel junction layer disposed on the contact plug; and   a sidewall insulating pattern disposed on a sidewall of the magnetic tunnel junction layer,   wherein the magnetic tunnel junction pattern includes a first magnetic layer, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer,   a thickness of an edge portion of the tunnel barrier layer is greater than a thickness of a center portion of the tunnel barrier layer, and   a first surface of the sidewall insulating pattern includes a point at which a slope of the first surface of the sidewall insulating pattern changes.   
     
     
         12 . The data storage device of  claim 11 , wherein a lower portion of the sidewall insulating pattern contacts a sidewall of the contact plug. 
     
     
         13 . The data storage device of  claim 11 , further comprising a capping layer disposed on the interlayer insulating layer and on the sidewall insulating pattern,
 wherein a thickness of the capping layer is greater than a thickness of the sidewall insulating pattern.   
     
     
         14 . The data storage device of  claim 13 , wherein a first surface of the capping layer includes a point at which a slope of the first surface of the capping layer changes. 
     
     
         15 . The data storage device of  claim 11 , further comprising a conductive pattern disposed on the second magnetic layer,
 wherein a width of the tunnel barrier layer is greater than a width of the conductive pattern.   
     
     
         16 . The data storage device of  claim 11 , wherein a thickness of the sidewall insulating pattern is not uniform. 
     
     
         17 . An electronic device comprising:
 a substrate;   a first interlayer insulating layer disposed on the substrate;   a contact plug disposed in the first interlayer insulating layer;   a magnetic tunnel junction layer disposed on the contact plug, and including a first magnetic layer, a tunnel barrier layer disposed on the first magnetic layer and a second magnetic layer disposed on the tunnel barrier layer;   a sidewall insulating pattern disposed on a sidewall of the magnetic tunnel junction layer;   a capping layer disposed on the interlayer insulating layer and on the sidewall insulating pattern; and   a second interlayer insulating layer disposed on the capping layer,   wherein a thickness of an edge portion of the tunnel barrier layer is greater than a thickness of a center portion of the tunnel barrier layer, and   a thickness of a middle portion of the sidewall insulating pattern is greater than a thickness of an upper portion of the sidewall insulating pattern, and greater than a thickness of a lower portion of the sidewall insulating pattern.   
     
     
         18 . The electronic device of  claim 17 , wherein a first surface of the sidewall insulating pattern includes a point at which a slope of the first surface of the sidewall insulating pattern changes. 
     
     
         19 . The electronic device of  claim 17 , wherein a first surface of the capping layer includes a point at which a slope of the first surface of the capping layer changes. 
     
     
         20 . The electronic device of  claim 17 , wherein a thickness of the capping layer is greater than a thickness of the sidewall insulating pattern.