Metal-doped Cu(In,Ga)(S,Se)2 Nanoparticles
Abstract
Various methods are used to provide a desired doping metal concentration in a CIGS-containing ink when the CIGS layer is deposited on a photovoltaic device. When the doping metal is antimony, it may be incorporated by: adding an antimony salt together with copper-, indium- and/or gallium-containing reagents at the beginning of the synthesis reaction of Cu(In,Ga)(S,Se) 2 nanoparticles; synthesizing Cu(In,Ga)(S,Se) 2 nanoparticles and adding an antimony salt to the reaction solution followed by mild heating before isolating the nanoparticles to aid antimony diffusion; and/or, using a ligand that is capable of capping the Cu(In,Ga)(S,Se) 2 nanoparticles with one end of its molecular chain and binding to antimony atoms with the other end of its chain.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A process for preparing metal-doped nanocrystals comprising:
adding an antimony salt to a mixture of copper-, indium-, and gallium-containing reagents at the beginning of a synthesis reaction of Cu(In,Ga)(S,Se) 2 nanoparticles.
2 . The process of claim 1 , wherein the antimony salt is an antimony halide.
3 . The process of claim 2 , wherein the antimony halide is antimony chloride.
4 . The process of claim 2 , wherein the antimony halide is antimony fluoride.
5 . The process of claim 2 , wherein the antimony halide is antimony iodide.
6 . The process of claim 2 , wherein the antimony halide is antimony bromide.
7 . The process of claim 1 , wherein the antimony salt is an organic antimony salt.
8 . The process of claim 7 , wherein the organic antimony salt is antimony acetate.
9 . The process of claim 7 , wherein the organic antimony salt is triphenylantimony.
10 . The process of claim 7 , wherein the organic antimony salt is tris(dimethylamino)antimony.
11 . The process of claim 7 , wherein the organic antimony salt is an antimony dialkyldithiocarbamate.
12 . The process of claim 11 , wherein the antimony dialkyldithiocarbamate is antimony diethyldithiocarbamate.
13 . The process of claim 11 , wherein the antimony dialkyldithiocarbamate is antimony dimethyldithiocarbamate.
14 . The process of claim 11 , wherein the antimony dialkyldithiocarbamate is antimony methylhexyldithiocarbamate.
15 . The process of claim 11 , wherein the antimony dialkyldithiocarbamate is antimony ethylhexyldithiocarbamate.
16 . A photovoltaic device comprising a layer of metal-doped nanocrystals prepared by the process of claim 1 .
17 . An ink composition, the ink composition comprising:
a solvent; and metal-doped nanocrystals dispersed in the solvent, wherein the metal-doped nanocrystals are prepared by a process according to claim 1 .
18 . A method of producing a film, the method comprising:
printing an ink according to claim 17 on a substrate; and sintering the printed ink to coalesce the metal-doped nanocrystals and form a film on the substrate.Join the waitlist — get patent alerts
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