Plasma processing method and plasma processing device

Abstract

A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.

1 - 18 . (canceled) 
     
     
         19 . A plasma processing apparatus comprising:
 a processing chamber in which plasma processing is performed for a sample having been mounted on a sample stage;   a radio frequency power supply which generates a plasma;   a first radio frequency power supply which supplies a first radio frequency power to the sample stage with a first frequency through a filter including a first and a second filters,   a second radio frequency power supply which supplies a second radio frequency power to the sample stage with a second frequency lower than the first frequency through the filter; and   a control device configured to control the first and the second radio frequency power supplies so as to supply either one of the first radio frequency power or the second radio frequency power to the sample stage while periodic switching is performed between the first radio frequency power and the second radio frequency power,   wherein the first filter is configured to pass the first radio frequency power and to prevent the second radio frequency power from being passed, and   wherein the second filter is configured to pass the second radio frequency power and to prevent the first radio frequency power from being passed.   
     
     
         20 . The plasma processing apparatus according to  claim 19 ,
 wherein the control device is further configured to control the first radio frequency power supply and the second radio frequency power supply so as to be combined when switching is performed between the first radio frequency power and the second radio frequency power.   
     
     
         21 . The plasma processing apparatus according to  claim 19 ,
 wherein the control device is further configured to control the first radio frequency power supply and the second radio frequency power supply in such a manner that one of the first radio frequency power and the second radio frequency power are time modulated.   
     
     
         22 . The plasma processing apparatus according to  claim 19 ,
 wherein the control device is further configured to control the radio frequency power supply and the first and second radio frequency power supplies, when the radio frequency power, the first radio frequency power, and the second radio frequency power are time modulated, such that a time duration of supply of the first radio frequency power to the sample stage and a time duration of supply of the second radio frequency power to the sample stage are identical; and each cycle time of the time modulation of the radio frequency power, the first radio frequency power, and the second radio frequency power are identical.   
     
     
         23 . The plasma processing apparatus according to  claim 19 ,
 wherein the control device is further configured to control the first and the second radio frequency power supplies in such a manner that values of output voltages of the first and the second radio frequency power supplies become different from each other.   
     
     
         24 . The plasma processing apparatus according to  claim 23 ,
 wherein the control device is further configured to control the first and the second radio frequency power supplies in such a manner that value of output voltage of the first radio frequency power supply becomes smaller than value of output voltage of the second radio frequency power supply.   
     
     
         25 . The plasma processing apparatus according to  claim 19 ,
 wherein the control device is further configured to control the first and the second radio frequency power supplies in such a manner that a sum of an ON-period of time modulated first radio frequency power and a one cycle period of time modulated second radio frequency power is equal to an ON-period of time modulated the radio frequency power when each of the radio frequency power, the first radio frequency power, and the second radio frequency power are time modulated.   
     
     
         26 . The plasma processing apparatus according to  claim 19 ,
 wherein the control device is further configured to control the radio frequency power supply and the first and second radio frequency power supplies, when power of the radio frequency power supply is time modulated, such that a sum of a time duration of supplying by the first radio frequency power to the sample stage and a time duration of supplying by the second radio frequency power to the sample stage is the same as a time duration of an ON-period of time modulated the radio frequency power; and a period during which power is not supplied by either the first radio frequency power supply or the second radio frequency power supply becomes equal to an OFF period of the time modulated the radio frequency power.   
     
     
         27 . The plasma processing apparatus according to  claim 26 ,
 wherein the control device is further configured to control the first radio frequency power supply and the second radio frequency power supply in such a manner that the first radio frequency power and the second radio frequency power are time modulated.