Resist underlayer film-forming composition containing indolocarbazole novolak resin

Abstract

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B 1 and B 2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B 1 and B 2 optionally form a ring with a carbon atom bonded to B 1 and B 2 .

1 . A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): 
       
         
           
           
               
               
           
         
       
       wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B 1  and B 2  are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B 1  and B 2  optionally form a ring with a carbon atom bonded to B 1  and B 2 . 
     
     
         2 . The resist underlayer film-forming composition according to  claim 1 , wherein A is a divalent group derived from a compound having an indolocarbazole structure. 
     
     
         3 . The resist underlayer film-forming composition according to  claim 2 , wherein the aromatic group for substituting a hydrogen atom on a condensed ring of the compound having an indolocarbazole structure is a phenyl group. 
     
     
         4 . The resist underlayer film-forming composition according to  claim 1 , wherein A is a divalent group derived from a compound of formula (2): 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  are each independently a hydrogen atom, a C 1-10  alkyl group, or a C 6-40  aryl group. 
     
     
         5 . The resist underlayer film-forming composition according to  claim 4 , wherein the compound of formula (2) is a product obtained by a reaction of indole with benzil in the presence of an acid compound. 
     
     
         6 . The resist underlayer film-forming composition according to  claim 1 , further comprising a crosslinker. 
     
     
         7 . The resist underlayer film-forming composition according to  claim 1 , further comprising an acid and/or an acid generator. 
     
     
         8 . A method for producing a resist underlayer film obtained by applying the resist underlayer film-forming composition according to  claim 1  to a semiconductor substrate and baking the composition. 
     
     
         9 . A method for producing a semiconductor device comprising steps of forming a resist underlayer film on a semiconductor substrate from the resist underlayer film-forming composition according to  claim 1 , forming a resist film on the resist underlayer film, irradiating the resist film with light or an electron beam followed by development, to form a resist pattern, etching the resist underlayer film through the formed resist pattern, and processing the semiconductor substrate through the patterned resist underlayer film. 
     
     
         10 . A method for producing a semiconductor device comprising steps of forming a resist underlayer film on a semiconductor substrate from the resist underlayer film-forming composition according to  claim 1 , forming a hard mask on the resist underlayer film, forming a resist film on the hard mask, irradiating the resist film with light or an electron beam followed by development, to form a resist pattern, etching the hard mask through the formed resist pattern, etching the resist underlayer film through the patterned hard mask, and processing the semiconductor substrate through the patterned resist underlayer film. 
     
     
         11 . A polymer having a unit structure of formula (1): 
       
         
           
           
               
               
           
         
       
       wherein A is a divalent group derived from a compound of formula (2): 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  are each independently a hydrogen atom, a C 1-10  alkyl group, or a C 6-40  aryl group, and B 1  and B 2  are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B 1  and B 2  optionally form a ring with a carbon atom bonded to B 1  and B 2 .