Light-emitting element

Abstract

wherein λ is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

What is claimed is: 
     
         1 . A semiconductor element, comprising:
 a substrate having a first surface and a second surface facing the opposite side of the first surface;   a first conductive layer formed on the first surface of the substrate, the first conductive layer having a first conductivity type;   a light-emitting layer formed on the first conductive layer;   a second conductive layer formed on the light-emitting layer, the second conductive layer having a second conductivity type which is an opposite conductivity type to the first conductivity type;   a first metal layer formed on the second conductive layer; and   a second metal layer formed on the first conductive layer such that the second metal layer is spaced apart from the light-emitting layer, the second metal layer having a first inflection point in a first direction perpendicular to the first surface of the substrate, wherein   
       the first inflection point is positioned at the opposite side to the first surface of the substrate with respect to a center of the second metal layer in the first direction. 
     
     
         2 . A semiconductor element, comprising:
 a substrate having a first surface and a second surface facing the opposite side of the first surface;   a first conductive layer formed on the first surface of the substrate, the first conductive layer having a first conductivity type;   a light-emitting layer formed on the first conductive layer;   a second conductive layer formed on the light-emitting layer, the second conductive layer having a second conductivity type which is an opposite conductivity type to the first conductivity type;   a first metal layer formed on the second conductive layer; and   a second metal layer formed on the first conductive layer such that the second metal layer is spaced apart from the light-emitting layer, wherein   the light-emitting layer is spaced apart from an end portion of the first conductive layer close to the second conductive layer as viewed in a first direction perpendicular to the first surface of the substrate, and   the first conductive layer is spaced apart from an end portion of the light-emitting layer close to the second conductive layer as viewed in the first direction.   
     
     
         3 . The semiconductor element according to  claim 1 , wherein the first inflection point includes a first position where a width of the second metal layer is changed. 
     
     
         4 . The semiconductor element according to  claim 3 , wherein the second metal layer has a first portion at a side of the first surface of the substrate with respect to the first position and a second portion at the opposite side of the first surface of the substrate having a width narrower than that of the first portion. 
     
     
         5 . The semiconductor element according to  claim 4 , wherein the second portion of the second metal layer has an upper surface higher than an upper surface of the second conductive layer. 
     
     
         6 . The semiconductor element according to  claim 2 , wherein a separation quantity of the light-emitting layer to the end portion of the first conductive layer is smaller than a thickness of the light-emitting layer. 
     
     
         7 . The semiconductor element according to  claim 2 , wherein a separation quantity of the first metal layer to the end portion of the light-emitting layer is smaller than a thickness of the first metal layer. 
     
     
         8 . The semiconductor element according to  claim 1 , wherein the first metal layer has at least two portions as viewed in the first direction between which at least part of the second metal layer interposed. 
     
     
         9 . The semiconductor element according to  claim 1 , wherein the second metal layer has at least two portions as viewed in the first direction between which at least part of the first metal layer interposed. 
     
     
         10 . The semiconductor element according to  claim 1 , wherein
 the first metal layer has a concave portion as viewed in the first direction,   the second metal layer has a convex portion as viewed in the first direction, and   the convex portion of the second metal layer is disposed in the concave portion of the first metal layer as viewed in the first direction.   
     
     
         11 . The semiconductor element according to  claim 10 , wherein
 the first metal layer has two of the concave portions as viewed in the first direction, and   the second metal layer has two of the convex portions as viewed in the first direction.   
     
     
         12 . The semiconductor element according to  claim 1 , wherein a distance between an upper surface of the first metal layer and the second surface of the substrate is equal to a distance between an upper surface of the second metal layer and the second surface of the substrate. 
     
     
         13 . The semiconductor element according to  claim 2 , wherein the first metal layer has at least two portions as viewed in the first direction between which at least part of the second metal layer interposed. 
     
     
         14 . The semiconductor element according to  claim 2 , wherein the second metal layer has at least two portions as viewed in the first direction between which at least part of the first metal layer interposed. 
     
     
         15 . The semiconductor element according to  claim 2 , wherein
 the first metal layer has a concave portion as viewed in the first direction,   the second metal layer has a convex portion as viewed in the first direction, and   the convex portion of the second metal layer is disposed in the concave portion of the first metal layer as viewed in the first direction.   
     
     
         16 . The semiconductor element according to  claim 15 , wherein
 the first metal layer has two of the concave portions as viewed in the first direction, and   the second metal layer has two of the convex portions as viewed in the first direction.   
     
     
         17 . The semiconductor element according to  claim 2 , wherein a distance between an upper surface of the first metal layer and the second surface of the substrate is equal to a distance between an upper surface of the second metal layer and the second surface of the substrate.