Semiconductor Devices Including a Thin Film

Abstract

Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.

1 .- 20 . (canceled) 
     
     
         21 . A semiconductor device, comprising:
 a substrate including a trench;   an active region defined by the trench;   a device isolation structure formed in the trench; and   a silicon film formed between an inner sidewall of the trench and the device isolation structure, wherein the silicon film directly contacts at least a portion of the inner sidewall of the trench.   
     
     
         22 . The semiconductor device of  claim 21 , wherein the silicon film is formed to have a thickness ranging from about 1 nm to 10 nm. 
     
     
         23 . The semiconductor device of  claim 21 , wherein the silicon film covers at least a portion of a bottom surface of the trench and/or covers at least a portion of the inner sidewall of the trench. 
     
     
         24 . The semiconductor device of  claim 21 , wherein the silicon film has a substantially uniform thickness on the inner sidewall and a bottom surface of the trench. 
     
     
         25 . The semiconductor device of  claim 21 , wherein the device isolation structure comprises an oxide layer liner covering the silicon film, a nitride liner on the oxide layer liner, and an insulating gap-filling layer filling the trench. 
     
     
         26 . The semiconductor device of  claim 21 , further comprising a gate electrode structure on the active region. 
     
     
         27 . The semiconductor device of  claim 26 , wherein the gate electrode structure includes a gate insulating layer, a gate conductive layer, and a hardmask layer which are vertically stacked. 
     
     
         28 . The semiconductor device of  claim 26 , further comprising source/drain regions formed at both sides of the gate electrode structure. 
     
     
         29 . A semiconductor device, comprising:
 a substrate including an active region defined by a trench;   a device isolation structure in the trench;   a silicon film extending from a region between a bottom surface of the trench and the device isolation structure to a region between at least a portion of an inner sidewall of the trench and the device isolation structure;   a gate electrode structure disposed on the active region; and   source/drain regions in the active region at both sides of the gate electrode structure,   wherein the silicon film directly contacts the bottom surface of the trench and the portion of the inner sidewall of the trench.   
     
     
         30 . The semiconductor device of  claim 29 , wherein the silicon film has a substantially uniform thickness. 
     
     
         31 . The semiconductor device of  claim 29 , wherein the substrate comprises a semiconductor substrate having a single crystalline structure, and
 wherein at least a portion of the silicon film has a polycrystalline structure.   
     
     
         32 . The semiconductor device of  claim 29 , wherein the device isolation structure comprises:
 an oxide liner on a surface of the silicon film;   a nitride liner on a surface of the oxide liner; and   an insulating gap-filling layer on the oxide liner.   
     
     
         33 . The semiconductor device of  claim 29 , wherein an upper width of the trench is greater than a lower width of the trench. 
     
     
         34 . A semiconductor device, comprising:
 a semiconductor substrate including an active portion defined by a trench therein;   a silicon film directly contacting at least a portion of an inner sidewall of the trench;   a conductive line crossing the active portion and the silicon film; and   a conductive pattern between a portion of the active portion and the conductive line.   
     
     
         35 . The semiconductor device of  claim 34 , wherein the conductive pattern is in direct contact with the portion of the active portion. 
     
     
         36 . The semiconductor device of  claim 34 , wherein the silicon film is locally formed on the inner sidewall of the trench. 
     
     
         37 . The semiconductor device of  claim 34 , wherein the silicon film extends from the portion of the inner sidewall of the trench to a bottom surface of the trench. 
     
     
         38 . The semiconductor device of  claim 34 , wherein the silicon film is disposed around the active portion when viewed from a plan view. 
     
     
         39 . The semiconductor device of  claim 34 , further comprising a device isolation structure provided in the trench,
 wherein at least a portion of the device isolation structure is direct contact with the silicon film.   
     
     
         40 . The semiconductor device of  claim 34 , further comprising a word line buried in the semiconductor substrate to cross the conductive line and the active portion.