An Electronic Device Package

Abstract

An electronic device package includes a semiconductor chip having a contact pad on a main face of the semiconductor chip, a contact element disposed on the contact pad, a dielectric layer disposed on the semiconductor chip and the contact element, and an encapsulant disposed onto the dielectric layer.

What is claimed is: 
     
         1 . An electronic device package, comprising:
 a semiconductor chip comprising a contact pad on a main face of the semiconductor chip;   a contact element disposed on the contact pad;   a dielectric layer disposed on the semiconductor chip and the contact element; and   an encapsulant disposed onto the dielectric layer.   
     
     
         2 . The electronic device package of  claim 1 , further comprising a carrier on which the semiconductor chip is disposed. 
     
     
         3 . The electronic device package of  claim 2 , wherein the carrier is a conductive carrier. 
     
     
         4 . The electronic device package of  claim 2 , wherein the carrier is a direct copper bonded (DCB) substrate. 
     
     
         5 . The electronic device package of  claim 2 , wherein the carrier is an insulated metal substrate (IMS). 
     
     
         6 . The electronic device package of  claim 2 , wherein the carrier is an auxiliary carrier. 
     
     
         7 . The electronic device package of  claim 2 , wherein the carrier is a temporary carrier. 
     
     
         8 . The electronic device package of  claim 1 , wherein the dielectric layer comprises one or more of a polyimide layer, a parylene layer, a polybenzoxazole layer, a resin layer, a silicone layer, a spin-on glass layer, a semiconductor oxide layer, a semiconductor nitride layer, and a semiconductor oxynitride layer. 
     
     
         9 . The electronic device package of  claim 1 , wherein the dielectric layer has a dielectric constant in a range from 2 to 5. 
     
     
         10 . The electronic device package of  claim 1 , wherein the dielectric layer has a dielectric strength in a range from 100 V/μm to 500 V/μm. 
     
     
         11 . The electronic device package of  claim 1 , wherein the dielectric layer has a dissipation factor in a range from 0.005 to 0.03, and wherein the dissipation factor is a measure of dielectric losses in the dielectric layer when used in an alternating field. 
     
     
         12 . The electronic device package of  claim 1 , wherein the dielectric layer has a modulus of elasticity in a range from 0.1 GPa to 5.0 GPa. 
     
     
         13 . The electronic device package of  claim 1 , wherein the dielectric layer has a thickness in a range from 2 μm to 100 μm. 
     
     
         14 . The electronic device package of  claim 1 , wherein the dielectric layer comprises a stack of two or more dielectric layers of one or more of different materials and of different properties. 
     
     
         15 . The electronic device package of  claim 1 , wherein the encapsulant comprises a host material comprising one or more of a resin, an epoxy silicone, an epoxy polyimide, a bismaleimide, a cyanate ester, and a thermoplast.