US2018347031A1PendingUtilityA1

Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Same Target

Assignee: JX NIPPON MINING & METALS CORPPriority: Mar 2, 2012Filed: Aug 9, 2018Published: Dec 6, 2018

Est. expiryMar 2, 2032(~5.6 yrs left)· nominal 20-yr term from priority

Inventors:Kazumasa Ohashi Takeo Okabe

B22F 7/04B22F 3/14C22C 1/045H01J 37/3426C22C 27/04B22F 3/15C23C 14/14B22F 7/008C23C 14/165C23C 14/3414

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Claims

Abstract

A tungsten sintered compact sputtering target and film are provided. The purity of the tungsten is 5N (99.999%) or more and the content of impurity carbon in the tungsten is 5 wtppm or less. The tungsten film, which is sputter-deposited by using the tungsten sintered compact sputtering target, has a low specific resistance due to the reduced carbon content in the tungsten target.

Claims

exact text as granted — not AI-modified

We claim: 
     
         1 . A tungsten film, comprising:
 a film of tungsten of a purity of 99.999% (5N) or greater;   the film having a content of carbon as an impurity of 3 wtppm or less; and   the film having a specific resistance of 12.3 μΩ·cm or less.   
     
     
         2 . The tungsten film according to  claim 1 , wherein the content of carbon as an impurity is 1 wtppm or less.

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