Pattern-forming method, and composition
Abstract
A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the pattern satisfies inequality (1). α ≥ θ ≥ α + β 2 ( 1 )
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A pattern-forming method comprising:
forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases, wherein the first composition comprises a first polymer and a solvent, the second composition comprises a second polymer and a solvent, the second polymer comprising a first block comprising a first structural unit and a second block comprising a second structural unit, a polarity of the second structural unit being higher than a polarity of the first structural unit, and immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the pattern satisfies an inequality (1):
α
≥
θ
≥
α
+
β
2
(
1
)
wherein in the inequality (1),
α represents a static contact angle (°) of water on a film formed from a homopolymer comprising the first structural unit alone, and
β represents a static contact angle (°) of water on a film formed from a homopolymer comprising the second structural unit alone.
2 . The pattern-forming method according to claim 1 , wherein the first polymer comprises the first structural unit.
3 . The pattern-forming method according to claim 1 , wherein the first structural unit is derived from substituted or unsubstituted styrene.
4 . The pattern-forming method according to claim 2 , wherein the second structural unit is derived from (meth)acrylic acid ester.
5 . The pattern-forming method according to claim 2 , wherein the first polymer further comprises the second structural unit, a third structural or a combination thereof, the second structural unit and the third structural unit differing from each other in their structures except for a part derived from a polymerizable group.
6 . The pattern-forming method according to claim 5 , wherein the first polymer comprises the first structural unit and the third structural unit.
7 . The pattern-forming method according to claim 5 , wherein the third structural unit is derived from (meth)acrylic acid hydroxy hydrocarbon ester or (meth)acrylic acid sulfanyl hydrocarbon ester.
8 . The pattern-forming method according to claim 5 , wherein the first polymer comprises the first structural unit and the second structural unit.
9 . The pattern-forming method according to claim 5 , wherein the first polymer is a random copolymer.
10 . The pattern-forming method according to claim 1 , wherein the first polymer is a homopolymer.
11 . The pattern-forming method according to claim 1 , wherein the first polymer comprises a first group comprising a hydroxy group, a sulfanyl group or a combination thereof.
12 . The pattern-forming method according to claim 11 , wherein the first group is bonded to at least one end of a main chain of the first polymer.
13 . The pattern-forming method according to claim 6 , wherein the first polymer comprises a gradient polymer structure of the first structural unit and the third structural unit, and the third structural unit comprises a first group comprising a hydroxy group, a sulfanyl group or a combination thereof.
14 . The pattern-forming method according to claim 1 , further comprising removing at least a part of a coating film formed on the sidewall from the first composition after applying the first composition.
15 . A pattern-forming method comprising:
forming a hole pattern on an upper face side of a substrate; applying a first composition to a sidewall of a hole of the hole pattern; forming a resin layer by applying a second composition to the upper face side of the substrate and an inner face side of the sidewall of the hole coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases, wherein the first composition comprises a first polymer and a solvent, the second composition comprises a second polymer and a solvent, the second polymer comprising a first block comprising a first structural unit and a second block comprising a second structural unit, a polarity of the second structural unit being higher than a polarity of the first structural unit, and immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the hole satisfies an inequality (1):
α
≥
θ
≥
α
+
β
2
(
1
)
wherein in the inequality (1),
α represents a static contact angle (°) of water on a film formed from a homopolymer comprising the first structural unit alone, and
β represents a static contact angle (°) of water on a film formed from a homopolymer comprising the second structural unit alone.
16 . The pattern-forming method according to claim 15 , wherein the first polymer comprises the first structural unit.
17 . The pattern-forming method according to claim 15 , wherein the first structural unit is derived from substituted or unsubstituted styrene.
18 . The pattern-forming method according to claim 15 , wherein the second structural unit is derived from (meth)acrylic acid ester.
19 . The pattern-forming method according to claim 16 , wherein the first polymer further comprises the second structural unit, a third structural or a combination thereof, the second structural unit and the third structural unit differing from each other in their structures except for a part derived from a polymerizable group.
20 . The pattern-forming method according to claim 19 , wherein the first polymer comprises the first structural unit and the third structural unit.
21 . The pattern-forming method according to claim 19 , wherein the third structural unit is derived from (meth)acrylic acid hydroxy hydrocarbon ester or (meth)acrylic acid sulfanyl hydrocarbon ester.
22 . The pattern-forming method according to claim 19 , wherein the first polymer comprises the first structural unit and the second structural unit.
23 . The pattern-forming method according to claim 19 , wherein the first polymer is a random copolymer.
24 . The pattern-forming method according to claim 15 , wherein the first polymer is a homopolymer.
25 . The pattern-forming method according to claim 15 , wherein the first polymer comprises a first group comprising a hydroxy group, a sulfanyl group or a combination thereof.
26 . The pattern-forming method according to claim 25 , wherein the first group is bonded to at least one end of a main chain of the first polymer.
27 . The pattern-forming method according to claim 20 , wherein the first polymer comprises a gradient polymer structure of the first structural unit and the third structural unit, and the third structural unit comprises a first group comprising a hydroxy group, a sulfanyl group or a combination thereof.
28 . The pattern-forming method according to claim 15 , further comprising removing at least a part of a coating film formed on the sidewall from the first composition after applying the first composition.
29 . A structure comprising:
a first layer comprising a first composition; and a second layer comprising a second composition, the second layer being provided on the first layer, wherein the first composition comprises a first polymer and a solvent, and the second composition comprises a second polymer and a solvent, the second polymer comprising a first block comprising a first structural unit and a second block comprising a second structural unit, a polarity of the second structural unit being higher than a polarity of the first structural unit, the second layer is capable of separating into a plurality of phases, and a static contact angle θ (°) of water on a surface of the first layer satisfies an inequality (1):
α
≥
θ
≥
α
+
β
2
(
1
)
wherein in the inequality (1),
α represents a static contact angle (°) of water on a film formed from a homopolymer comprising the first structural unit alone, and
β represents a static contact angle (°) of water on a film formed from a homopolymer comprising the second structural unit alone.
30 . A structure comprising:
a first layer having an annular shape and comprising a first composition; and a second layer comprising a second composition, the second layer being provided on the first layer, wherein the first composition comprises a first polymer and a solvent, and the second composition comprises a second polymer and a solvent, the second polymer comprising a first block comprising a first structural unit and a second block comprising a second structural unit, a polarity of the second structural unit being higher than a polarity of the first structural unit, the second layer is capable of separating into a plurality of phases, and a static contact angle θ (°) of water on a surface of the first layer satisfies an inequality (1):
α
≥
θ
≥
α
+
β
2
(
1
)
wherein in the inequality (1),
α represents a static contact angle (°) of water on a film formed from a homopolymer comprising the first structural unit alone, and
β represents a static contact angle (°) of water on a film formed from a homopolymer comprising the second structural unit alone.Join the waitlist — get patent alerts
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