Recording medium, method of manufacturing fullerene thin film, recording reproducing apparatus, information recording method, and information reading method

Abstract

According to the present invention, there is provided a recording medium comprising a substrate, a platinum layer formed on the substrate and having a (111) plane preferentially oriented, and a fullerene single crystal thin film formed on the platinum layer, and configured to be a recording layer, wherein an average value of average surface roughness Ra's with respect to four or more visual fields measured by using an atomic force microscope in a surface of the fullerene thin film is 0.5 nm or less.

1 . A method of manufacturing a fullerene thin film, comprising:
 a step of forming a platinum layer by sputtering on a substrate; and   a step of forming a fullerene layer by vacuum evaporation on the platinum layer.   
     
     
         2 . The method of manufacturing a fullerene thin film according to  claim 1 ,
 wherein the fullerene layer is a single crystal thin film.   
     
     
         3 . The method of manufacturing a fullerene thin film according to  claim 1 ,
 wherein a temperature of the substrate is 400° C. to 900° C. in the step of forming the platinum layer.   
     
     
         4 . The method of manufacturing a fullerene thin film according to  claim 1 ,
 wherein the temperature of the substrate is 400° C. to 900° C., and annealing is performed after the step of forming the platinum layer.   
     
     
         5 . The method of manufacturing a fullerene thin film according to  claim 1 ,
 wherein the substrate is a sapphire substrate.   
     
     
         6 . The method of manufacturing a fullerene thin film according to  claim 1 ,
 wherein the temperature of the substrate is 100° C. to 200° C. in the step of forming the fullerene layer.   
     
     
         7 . The method of manufacturing a fullerene thin film according to  claim 1 ,
 wherein the temperature of the substrate is 100° C. to 200° C., and annealing is performed after the step of forming the fullerene layer.