Wavelength converted light emitting device with small source size

Abstract

A lighting structure according to embodiments of the invention includes a semiconductor light emitting device and a flat wavelength converting element attached to the semiconductor light emitting device. The flat wavelength converting element includes a wavelength converting layer for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength. The flat wavelength converting element further includes a transparent layer. The wavelength converting layer is formed on the transparent layer.

What is claimed is: 
     
         1 . A lighting structure comprising:
 a semiconductor light emitting device deposited on a die;   a substantially flat wavelength converting element attached to the semiconductor light emitting device, an area of a first surface of the wavelength converting element facing the semiconductor light emitting device being greater or similar to an area of a first surface of the semiconductor light emitting device, the substantially flat wavelength converting element comprising a wavelength converting layer, and the area of the first surface of the wavelength converting element being substantially the same as the area of a first surface of the die; and   a reflective material in direct contact with a side of the semiconductor light emitting device and a portion of the first surface of the wavelength converting element extending beyond the first surface of the semiconductor light emitting device.   
     
     
         2 . The lighting structure of  claim 1  wherein the area of the first surface of the substantially flat wavelength converting element is no more than 150% of an area of a first surface of the semiconductor light emitting device. 
     
     
         3 . The lighting structure of  claim 1  wherein the wavelength converting element further comprises a transparent layer, the wavelength converting layer is deposited on the transparent layer, the transparent layer comprising glass and the wavelength converting layer comprising phosphor mixed with a transparent material and laminated on the glass. 
     
     
         4 . The lighting structure of  claim 1  wherein a length that the wavelength converting element extends beyond an edge of the semiconductor light emitting device is no more than 30 μm. 
     
     
         5 . The lighting structure of  claim 1 , wherein the die is one of a plurality of wafer die on a semiconductor light emitting device wafer. 
     
     
         6 . The lighting structure of  claim 5 , wherein the semiconductor light emitting device wafer is sigulated to separate the die from the plurality of wafer die. 
     
     
         7 . The lighting structure of  claim 1 , wherein the reflective material comprises TiO 2 . 
     
     
         8 . The lighting structure of  claim 7 , wherein the TiO 2  is deposited in a silicone material. 
     
     
         9 . A method comprising:
 forming a wavelength converting element comprising a wavelength converting layer;   after said forming, attaching the wavelength converting element to a wafer of semiconductor light emitting devices;   after said attaching, dicing the wavelength converting element and the wafer of semiconductor light emitting devices to form a plurality of lighting elements;   after said dicing, disposing the plurality of lighting elements on a handling substrate; and   disposing a reflective material between the plurality of lighting elements.   
     
     
         10 . The method of  claim 9  wherein forming a wavelength converting element comprises laminating a wavelength converting layer on a glass layer. 
     
     
         11 . The method of  claim 9 , further comprising depositing the wavelength converting layer on a transparent layer. 
     
     
         12 . The method of  claim 11 , further comprising removing the transparent layer after said attaching. 
     
     
         13 . A method comprising:
 forming a wavelength converting element comprising a wavelength converting layer, the wavelength converting element being rigid;   after said forming, attaching the wavelength converting element to a plurality of diced semiconductor light emitting devices disposed on a first handling substrate;   after said attaching, dicing the wavelength converting element to form a plurality of lighting elements,   after said dicing, disposing the plurality of lighting elements on a second handling substrate; and   disposing a reflective material between the plurality of lighting elements.   
     
     
         14 . The method of  claim 13  wherein the wavelength converting layer is disposed on a transparent layer. 
     
     
         15 . The method of  claim 14  wherein forming the wavelength converting element comprises laminating the wavelength converting layer on the transparent layer. 
     
     
         16 . The method of  claim 14  further comprising removing the transparent layer after said dicing. 
     
     
         17 . The method of  claim 16  wherein:
 the wavelength converting element comprises a thermal release layer disposed between the wavelength converting layer and the transparent layer; and 
 removing the transparent layer comprises removing by thermal release.