Sealed semiconductor light emitting device

Abstract

A light-emitting device is described herein. The device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The device also includes a metal layer with openings formed therein and filled with an insulating material. The openings separate the metal layer into a first portion that is electrically isolated from a second portion. The first portion is coupled to the n-type region and the second portion coupled to the p-type region. The device also includes conductive stacks. A first surface of each of the conductive stacks contacts a surface of the metal layer opposite the semiconductor structure. A respective gap is positioned between each of the conductive stacks. A body is in direct contact with a second surface of each of the conductive stacks that is opposite the first surface.

1 . A device comprising:
 a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;   a metal layer having openings formed therein and filled with an insulating material, the openings separating the metal layer into a first portion that is electrically isolated from a second portion, the first portion coupled to the n-type region and the second portion coupled to the p-type region;   a plurality of conductive stacks, a first surface of each of the conductive stacks contacting a surface of the metal layer opposite the semiconductor structure, a respective gap positioned between each of the conductive stacks; and   a body in direct contact with a second surface of each of the conductive stacks that is opposite the first surface.   
     
     
         2 . The device of  claim 1 , wherein the insulating material completely covers all exposed surfaces of the semiconductor structure. 
     
     
         3 . The device of  claim 1 , wherein the metal layer is bonded to the plurality of conductive stacks. 
     
     
         4 . The device of  claim 1 , wherein the body includes a plurality of vias formed therein, each of the plurality of vias aligned with one of the plurality of conductive stacks. 
     
     
         5 . The device of  claim 4 , wherein each of the vias is lined with a conductive material that also lines an outer surface of the body that is not adjacent the plurality of conductive stacks. 
     
     
         6 . The device of  claim 5 , wherein the conductive material that lines each of the vias is coupled to a respective one of the plurality of conductive stacks. 
     
     
         7 . The device of  claim 1 , wherein each of the conductive stacks comprises a stack of a plurality of different conductive materials. 
     
     
         8 . The device of  claim 1 , wherein each of the conductive stacks comprises successive layers of copper, nickel and gold. 
     
     
         9 . The device of  claim 1 , wherein the gaps between the conductive stacks are filled with ambient gas. 
     
     
         10 . The device of  claim 1 , wherein the conductive stacks and the first and second portions of the metal layer all have the same shape. 
     
     
         11 . The device of  claim 1 , wherein the conductive stacks and the first and second portions of the metal layer have different shapes. 
     
     
         12 . The device of  claim 1 , wherein opposing conductive stacks and first or second portions of the metal layer are not precisely aligned.