Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same

Abstract

A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

What is claimed is: 
     
         1 . A cleaning apparatus, comprising:
 a first cleaning unit including a dual nozzle, the dual nozzle connected to supply a first chemical liquid from a first nozzle and a first spray from a second nozzle to a substrate,   wherein the dual nozzle is configured to move in a first direction while the first chemical liquid and the first spray are supplied to the substrate,   wherein the first direction is a direction in which the first spray is supplied ahead of the first chemical liquid to the substrate.   
     
     
         2 . The cleaning apparatus of  claim 1 , wherein the first direction is a circular movement direction. 
     
     
         3 . The cleaning apparatus of  claim 1 , further comprising a second cleaning unit including a brush and a third nozzle,
 wherein the brush and the third nozzle are configured to brush a surface of the substrate while supplying a second chemical liquid from the third nozzle onto the substrate.   
     
     
         4 . The cleaning apparatus of  claim 3 , wherein the first chemical liquid includes an acidic solution, and the second chemical liquid includes an alkaline solution. 
     
     
         5 . The cleaning apparatus of  claim 3 , wherein the first chemical liquid includes hydrofluoric acid, and the second chemical liquid includes an ammonia water. 
     
     
         6 . The cleaning apparatus of  claim 5 , wherein the hydrofluoric acid has a weight percentage of 0.01 wt % to 2 wt % in relation to the first chemical liquid. 
     
     
         7 . The cleaning apparatus of  claim 5 , wherein the ammonia water has ammonia (NH 4 OH) in the ammonia water with a weight percentage of 0.01 wt % to 4 wt % of the ammonia water. 
     
     
         8 . The cleaning apparatus of  claim 1 , wherein the first nozzle is a low-pressure nozzle configured to supply the first chemical liquid at a first pressure, and
 wherein the second nozzle is a high-pressure nozzle connected to the first nozzle in the first direction and configured to supply the first spray at a second pressure higher than the first pressure.   
     
     
         9 . The cleaning apparatus of  claim 1 , wherein the first cleaning unit further comprises a first arm configured to move the dual nozzle above the substrate, and
 wherein the first arm is configured to move the dual nozzle in the first direction from above a center of the substrate toward above a periphery of the substrate while supplying the first chemical liquid and the first spray onto the substrate.   
     
     
         10 . The cleaning apparatus of  claim 1 , further comprising a second cleaning unit including a second dual nozzle configured to supply a second spray ahead of a second chemical liquid while the second dual nozzle moves from above a center of the substrate toward above a periphery of the substrate. 
     
     
         11 . A chemical mechanical polishing system, comprising:
 a substrate transfer apparatus configured to transfer a substrate;   a polishing apparatus including a pad configured to polish the substrate; and   a cleaning apparatus configured to clean the substrate polished by the pad to remove particles generated in the polishing apparatus,   wherein the cleaning apparatus comprises a first cleaning unit including a first dual nozzle connected to supply, to the substrate, a first chemical liquid and a first spray including a first liquid, the first dual nozzle including a first nozzle connected to supply the first chemical liquid and a second nozzle configured to supply the first spray,   wherein the first dual nozzle is configured to move in a first direction and the first direction is a direction in which the first spray is supplied ahead of the first chemical liquid to the substrate.   
     
     
         12 . The chemical mechanical polishing system of  claim 11 , wherein the first direction is a circular movement direction. 
     
     
         13 . The chemical mechanical polishing system of  claim 11 , wherein the cleaning apparatus further comprises a second cleaning unit including a brush and a third nozzle,
 wherein the brush is configured to brush a surface of the substrate while the third nozzle supplies a second chemical liquid from the third nozzle onto the substrate.   
     
     
         14 . The chemical mechanical polishing system of  claim 13 , wherein the first cleaning unit is configured to clean the substrate after the second cleaning unit cleans the substrate. 
     
     
         15 . The chemical mechanical polishing system of  claim 11 , wherein the first chemical liquid includes an acidic solution. 
     
     
         16 . The chemical mechanical polishing system of  claim 11 , wherein the first dual nozzle is configured to move from above a center of the substrate toward above a periphery of the substrate while the first dual nozzle supplies the first chemical liquid and the first spray on the substrate. 
     
     
         17 . The chemical mechanical polishing system of  claim 11 , wherein the first nozzle is a low-pressure nozzle configured to supply the first chemical liquid at a first pressure, and
 wherein the second nozzle is a high-pressure nozzle connected to the first nozzle in the first direction and configured to supply the first spray at a second pressure higher than the first pressure.   
     
     
         18 . The chemical mechanical polishing system of  claim 11 , wherein the first cleaning unit further comprises a first arm configured to move the first dual nozzle above the substrate, and
 wherein the first arm is configured to move the first dual nozzle in the first direction from above a center of the substrate toward above a periphery of the substrate while supplying the first chemical liquid and the first spray onto the substrate.   
     
     
         19 . The chemical mechanical polishing system of  claim 11 , wherein the cleaning apparatus further comprises a second cleaning unit including a second dual nozzle configured to supply a second spray ahead of a second chemical liquid while the second dual nozzle moves from above a center of the substrate toward above a periphery of the substrate. 
     
     
         20 . The chemical mechanical polishing system of  claim 19 , wherein the second cleaning unit further comprises a second arm configured to move the second dual nozzle above the substrate,
 wherein the second arm is configured to move the second dual nozzle in a second direction from above a center of the substrate toward above a periphery of the substrate while supplying the first chemical liquid and the first spray onto the substrate, and   wherein the second direction is a circular movement direction.