US2018313776A1PendingUtilityA1

Gas sensor device, gas measuring device, and method of manufacturing gas sensor device

Assignee: FUJITSU LTDPriority: Apr 28, 2017Filed: Apr 20, 2018Published: Nov 1, 2018
Est. expiryApr 28, 2037(~10.8 yrs left)· nominal 20-yr term from priority
G01N 2033/4975G01N 33/84G01N 33/497G01N 27/125G01N 33/4975
60
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Claims

Abstract

A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A gas sensor device comprising:
 a first electrode;   a second electrode; and   a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.   
     
     
         2 . The gas sensor device according to  claim 1 , wherein the polythiophene film contains a polythiophene molecule, and the cuprous bromide is bonded to a sulfur atom contained in the polythiophene molecule. 
     
     
         3 . The gas sensor device according to  claim 2 , wherein the polythiophene film has a stacking structure in which a plurality of polythiophene molecules are stacked on each other in a direction from the first electrode to the second electrode. 
     
     
         4 . The gas sensor device according to  claim 1 , wherein the polythiophene film has poly(3-thiophene). 
     
     
         5 . A gas measuring device comprising:
 a gas sensor device; and   a measurement circuit coupled to the gas sensor device,   wherein the gas sensor device includes   a first electrode;   a second electrode; and   a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed,   wherein the measurement circuit measures an electrical property of the polythiophene film at a predetermined interval.   
     
     
         6 . The gas measuring device according to  claim 5 , wherein
 the measurement circuit calculates a change of the electric property of the polythiophene film at the predetermined interval.   
     
     
         7 . A method of manufacturing a gas sensor device, the method comprising:
 forming a first electrode and a second electrode on a substrate; and   forming a polythiophene film on the substrate between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.   
     
     
         8 . The method of manufacturing a gas sensor device according to  claim 7 , wherein the forming a polythiophene film absorbed cuprous bromide is performed by contacting the polythiophene film and a cupric bromide.

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