Manufacturing method of electrode layer of tft substrate and manufacturing method of flexible tft substrate

Abstract

The present invention provides a manufacturing method of an electrode layer of a TFT substrate and a manufacturing method of a flexible TFT substrate. The manufacturing method of an electrode layer of a TFT substrate according to the present invention first forms a metallic nickel layer on a silicon backing, followed by applying CVD to deposit a graphene layer on the metallic nickel layer and applies plasma etching to etch the graphene layer to form a patterned graphene layer, and finally dissolves away the metallic nickel layer to separate the patterned graphene layer from the silicon backing to allow for transfer of the patterned graphene layer to obtain an electrode layer on a TFT substrate, wherein the electrode layer is formed of a graphene material that has excellent electrical conduction and mechanical properties and also has good thermal stability and chemical stability, so that the manufacturing method realizes production of an electrode layer that suits the need for bending of an electrode layer of a flexible display device.

What is claimed is: 
     
         1 . A manufacturing method of an electrode layer of a thin-film transistor (TFT) substrate, comprising the following steps:
 Step  1 : providing a silicon backing and forming a metallic nickel layer on the silicon backing;   Step  2 : applying chemical vapor deposition to deposit a graphene layer on the metallic nickel layer and applying plasma etching to etch the graphene layer so as to form a patterned graphene layer; and   Step  3 : removing the metallic nickel layer that is located on the silicon backing through dissolution so as to separate the patterned graphene layer from the silicon backing and then transferring the patterned graphene layer to form an electrode layer on a TFT substrate.   
     
     
         2 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 1 , wherein the metallic nickel layer formed in Step  1  has a thickness of 10-50 nm. 
     
     
         3 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 1 , wherein the graphene layer formed in Step  2  through deposition has a thickness of 5-10 nm. 
     
     
         4 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 1 , wherein alignment marking is applied in Step  3  for position-aligned transfer of the patterned graphene layer. 
     
     
         5 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 1 , wherein the TFT substrate comprises a flexible low temperature poly-silicon TFT substrate. 
     
     
         6 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 1 , wherein the electrode layer formed in Step  3  comprises a gate electrode of the TFT substrate. 
     
     
         7 . A manufacturing method of a flexible thin-film transistor (TFT) substrate, comprising the following steps:
 Step  10 : providing a glass plate and forming a flexible substrate on the glass plate;   Step  20 : forming, in sequence, a buffer layer, an active layer, and a gate insulation layer on the flexible substrate;   Step  30 : providing a silicon backing and forming a metallic nickel layer on the silicon backing; applying chemical vapor deposition to deposit a graphene layer on the metallic nickel layer and applying plasma etching to etch the graphene layer so as to form a patterned graphene layer; and removing the metallic nickel layer that is located on the silicon backing through dissolution so as to separate the patterned graphene layer from the silicon backing, and then, transferring the patterned graphene layer to the gate insulation layer to form a gate electrode layer; and   Step  40 : forming, in sequence, an interlayer insulation layer and a source and drain metal layer on the gate insulation layer and the gate electrode layer.   
     
     
         8 . The manufacturing method of a flexible TFT substrate as claimed in  claim 7 , wherein the flexible TFT substrate comprises a low temperature poly-silicon TFT substrate;
 the flexible substrate formed in Step  10  comprises a polyimide substrate, which has a thickness of 10-20 μm;   the buffer layer, the active layer, and the gate insulation layer formed in Step  20  respectively have thicknesses of 200-300 nm, 40-50 nm, and 50-200 nm; and   the interlayer insulation layer and the source and drain metal layer formed in Step  40  respectively have thicknesses of 500-700 nm and 400-600 nm.   
     
     
         9 . The manufacturing method of a flexible TFT substrate as claimed in  claim 7 , wherein in Step  30 , the metallic nickel layer so formed has a thickness of 10-50 nm and the graphene layer so formed through deposition has a thickness of 5-10 nm. 
     
     
         10 . The manufacturing method of a flexible TFT substrate as claimed in  claim 7 , wherein in Step  30 , alignment marking is applied for position-aligned transfer of the patterned graphene la 
     
     
         11 . A manufacturing method of an electrode layer of a thin-film transistor (TFT) substrate, comprising the following steps:
 Step  1 : providing a silicon backing and forming a metallic nickel layer on the silicon backing;   Step  2 : applying chemical vapor deposition to deposit a graphene layer on the metallic nickel layer and applying plasma etching to etch the graphene layer so as to form a patterned graphene layer; and   Step  3 : removing the metallic nickel layer that is located on the silicon backing through dissolution so as to separate the patterned graphene layer from the silicon backing and then transferring the patterned graphene layer to form an electrode layer on a TFT substrate;   wherein the metallic nickel layer formed in Step  1  has a thickness of 10-50 nm; and   wherein the graphene layer formed in Step  2  through deposition has a thickness of 5-10 nm.   
     
     
         12 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 11 , wherein alignment marking is applied in Step  3  for position-aligned transfer of the patterned graphene layer. 
     
     
         13 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 11 , wherein the TFT substrate comprises a flexible low temperature poly-silicon TFT substrate. 
     
     
         14 . The manufacturing method of an electrode layer of a TFT substrate as claimed in  claim 11 , wherein the electrode layer formed in Step  3  comprises a gate electrode of the TFT substrate.