Semiconductor device and method of manufacturing semiconductor device

Abstract

According to one embodiment, at first, a compound semiconductor layer is bonded to a position straddling a plurality of chip formation regions arranged on a substrate. One of the chip formation regions has a first size, and the compound semiconductor layer has a second size smaller than the first size. Thereafter, the compound semiconductor layer is processed to provide compound semiconductor elements on the chip formation regions. Then, the substrate is divided to correspond to the chip formation regions.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate;   a first structure arranged on the substrate, the first structure including a function block that includes an element pattern and has a predetermined function; and   a compound semiconductor element directly bonded to the first structure,   wherein no other function block is arranged outside an arrangement position of the compound semiconductor element, when a center side of the substrate is an inside and a periphery thereof is an outside.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the substrate has a rectangular shape, and   the compound semiconductor element is arranged at a position most distant from a center of the substrate.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein a plurality of compound semiconductor elements are arranged at the first structure. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein
 the first structure includes at least one of a reception light/electric signal conversion circuit and an electric signal/transmission light conversion circuit as the function block, and   the compound semiconductor element includes at least one of a light receiving element and a light emitting element, the light receiving element being bonded to the reception light/electric signal conversion circuit in the case where the first structure includes the reception light/electric signal conversion circuit, the light emitting element being bonded to the electric signal/transmission light conversion circuit in the case where the first structure includes the electric signal/transmission light conversion circuit.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein the substrate is formed of a silicon substrate. 
     
     
         6 . The semiconductor device according to  claim 1 , further comprising a second structure that is arranged on the first structure provided with the compound semiconductor element. 
     
     
         7 . The semiconductor device according to  claim 6 , wherein
 the second structure is a wiring structure that connects the compound semiconductor element to another device element built in the first structure.   
     
     
         8 . The semiconductor device according to  claim 1 , wherein the compound semiconductor element is bonded onto the first structure by means of oxide film bonding or adhesive bonding. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein
 the substrate has a rectangular shape, and   the compound semiconductor element is arranged at a first corner of the substrate.   
     
     
         10 . The semiconductor device according to  claim 9 , wherein
 the first structure includes a processor as the function block, and   the processor is arranged at a position distant from the first corner.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein the other function block is arranged between the compound semiconductor element and the processor. 
     
     
         12 . The semiconductor device according to  claim 3 , wherein
 the substrate has a rectangular shape, and   the compound semiconductor elements are arranged at a first corner and a second corner of the substrate.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein the second corner exists at a diagonal of the first corner. 
     
     
         14 . The semiconductor device according to  claim 3 , wherein
 the substrate has a rectangular shape, and   the compound semiconductor elements are arranged at a first corner, a second corner and a third corner of the substrate.   
     
     
         15 . The semiconductor device according to  claim 3 , wherein
 the substrate has a rectangular shape, and   the compound semiconductor elements are arranged at four corners of the substrate.   
     
     
         16 . The semiconductor device according to  claim 1 , wherein
 the substrate has a rectangular shape, and   the compound semiconductor element is arranged at a peripheral position of the substrate other than the corners.   
     
     
         17 . The semiconductor device according to  claim 16 , wherein the compound semiconductor element is arranged along a first side of the substrate. 
     
     
         18 . The semiconductor device according to  claim 17 , wherein another function block is not arranged between the compound semiconductor element and the first side. 
     
     
         19 . The semiconductor device according to  claim 17 , wherein
 the first structure includes a processor as the function block, and   the processor is arranged along a second side opposed to the first side.   
     
     
         20 . The semiconductor device according to  claim 19 , wherein the other function block is arranged between the compound semiconductor element and the processor.