Solid-state image sensing element and imaging system

Abstract

Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel and a plurality of second pixels. At least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and a configuration between the counter electrode and the microlens of the first pixel is the same as a configuration between the counter electrode and the microlens of each of the plurality of second pixels.

What is claimed is: 
     
         1 . A solid-state image sensing element comprising:
 a pixel array having a plurality of pixels arranged in two dimensions,   each of the plurality of pixels including:   a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and   a microlens arranged above the photoelectric conversion unit,   wherein
 the plurality of pixels includes a first pixel and a plurality of second pixels, 
 at least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and 
   the first pixel is provided between one second pixel that is provided closest to a first outermost periphery of the pixel array and the first outermost periphery of the pixel array, another second pixel is provided between the one second pixel and a second outermost periphery of the pixel array, the second outermost periphery being located at an opposite side of the first outermost periphery, and the another second pixel is adjacent to the one second pixel.   
     
     
         2 . The solid-state image sensing element according to  claim 1 , wherein the plurality of pixels further includes a photoelectric conversion layer separation unit configured to divide the photoelectric conversion layer of two adjacent pixels among the plurality of pixels. 
     
     
         3 . The solid-state image sensing element according to  claim 2 , wherein the photoelectric conversion layer separation unit includes at least one of an insulating member and a light shielding member. 
     
     
         4 . The solid-state image sensing element according to  claim 1 , wherein a photoelectric conversion layer of each of the plurality of second pixels is smaller than a photoelectric conversion layer of the first pixel. 
     
     
         5 . The solid-state image sensing element according to  claim 4 , further comprises a light shielding member provided between the photoelectric conversion layer of a second pixel among the second pixels and the photoelectric conversion layer of a pixel adjacent to the second pixel. 
     
     
         6 . The solid-state image sensing element according to  claim 1 , wherein each of the plurality of pixels further includes a color filter between the counter electrode and the microlens. 
     
     
         7 . The solid-state image sensing element according to  claim 6 , wherein a light shielding film is provided between the counter electrode and the color filter and between adjacent pixels. 
     
     
         8 . The solid-state image sensing element according to  claim 7 , wherein a protective film is provided between the light shielding film and the color filter. 
     
     
         9 . The solid-state image sensing element according to  claim 1 , wherein the photoelectric conversion layer is made of any of intrinsic hydrogenated amorphous silicon, a compound semiconductor, and an organic semiconductor. 
     
     
         10 . The solid-state image sensing element according to  claim 1 , wherein
 wherein each of the plurality of pixels further includes a signal readout circuit, wherein
 the signal readout circuit includes an in-pixel amplifier, and 
 the pixel electrode is connected to an input portion of the in-pixel amplifier. 
   
     
     
         11 . An imaging system comprising:
 the solid-state image sensing element according to  claim 1 ;   an optical system configured to form an image onto the plurality of pixels; and   a video signal processing unit configured to process a signal output from the solid-state image sensing element and generate image data.