Composition for forming silicon-containing film for euv lithography, silicon-containing film for euv lithography, and pattern-forming method

Abstract

Provided are: a composition for forming a silicon-containing film for EUV lithography capable of forming a silicon-containing film that is superior in an outgas-inhibiting property and enables formation of a resist pattern with a superior collapse-inhibiting property and a favorable configuration; a silicon-containing film for EUV lithography; and a pattern-forming method. The composition for forming a silicon-containing film for EUV lithography contains: a polysiloxane; a compound having an onium cation and a sulfonate anion; and a solvent, in which a sum of atomic masses of the atoms constituting the sulfonate anion is no less than 240, the sulfonate anion has a sulfonate group, and a carbon atom adjacent to the sulfonate group, and a fluorine atom does not bond to the carbon atom.

What is claimed is: 
     
         1 . A composition for forming a silicon-containing film for EUV lithography comprising:
 a polysiloxane;   a compound comprising an onium cation and a sulfonate anion; and   a solvent, wherein   a sum of atomic masses of atoms constituting the sulfonate anion is no less than 240,   the sulfonate anion comprises a sulfonate group and a carbon atom adjacent to the sulfonate group, and   a fluorine atom does not bond to the carbon atom.   
     
     
         2 . The composition according to  claim 1 , wherein the sum of the atomic masses of the atoms constituting the sulfonate anion is no less than 290. 
     
     
         3 . The composition according to  claim 1 , wherein the onium cation is a sulfonium cation, an iodonium cation or a combination thereof. 
     
     
         4 . A silicon-containing film for EUV lithography formed from the composition according to  claim 1 . 
     
     
         5 . A pattern-forming method comprising:
 applying the composition according to  claim 1  onto an upper face side of a substrate; and   patterning a silicon-containing film formed after the applying.   
     
     
         6 . The pattern-forming method according to  claim 5 , wherein the patterning of the silicon-containing film comprises:
 applying a resist composition onto an upper face side of the silicon-containing film;   exposing to an extreme ultraviolet ray a resist film formed after the applying of the resist composition;   developing the resist film exposed; and   etching the silicon-containing film using as a mask a resist pattern formed after the developing.   
     
     
         7 . The pattern-forming method according to  claim 5 , further comprising before the applying,
 forming an organic underlayer film on at least the upper face side of the substrate.