Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction

Abstract

Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.

1 .- 12 . (canceled) 
     
     
         13 . An apparatus for measuring a temperature of a substrate, comprising:
 a light source configured to direct an amount of light to an area of a substrate;   a focus lens positioned to collect light reflected from the substrate;   a beam splitter optically coupled to the focus lens; and   an emissometer configured to determine an emissivity of the substrate, wherein the beam splitter directs a first portion of the light reflected from the substrate to the emissometer.   
     
     
         14 . The apparatus of  claim 13 , further comprising an imaging device, wherein the beam splitter directs a second portion of the light reflected from the substrate to the imaging device. 
     
     
         15 . The apparatus of  claim 14 , wherein the imaging device facilitates generation of a magnified image of a diffraction pattern of the second portion of the reflected light. 
     
     
         16 . The apparatus of  claim 14 , wherein the imaging device is a CCD camera. 
     
     
         17 . The apparatus of  claim 14 , wherein the light source is a monochromatic light source. 
     
     
         18 . The apparatus of  claim 14 , wherein the beam splitter comprises two triangular glass prisms adhere together by a resin. 
     
     
         19 . The apparatus of  claim 18 , wherein the first portion of reflected light is directed in a direction perpendicular to a direction of the second portion of reflected light. 
     
     
         20 . A system for processing a substrate, comprising:
 a laser source aligned with a process area of the substrate;   a light source configured to direct an amount of light to the process area of the substrate;   a focus lens positioned to collect light reflected from the substrate;   a beam splitter optically coupled to the focus lens; and   an emissometer configured to determine an emissivity of the substrate, wherein the beam splitter directs a first portion of the light reflected from the substrate to the emissometer.   
     
     
         21 . The system of  claim 20 , wherein the laser source and the light source each produce light at wavelengths different from one another. 
     
     
         22 . The system of  claim 20 , further comprising an imaging device, wherein the beam splitter directs a second portion of the light reflected from the substrate to the imaging device. 
     
     
         23 . The system of  claim 22 , wherein the imaging device facilitates generation of a magnified image of a diffraction pattern of the second portion of the reflected light. 
     
     
         24 . The system of  claim 22 , wherein the imaging device is a CCD camera. 
     
     
         25 . The system of  claim 20 , wherein the light source is a monochromatic light source. 
     
     
         26 . The system of  claim 20 , wherein the beam splitter comprises two triangular glass prisms adhere together by a resin. 
     
     
         27 . The system of  claim 26 , wherein the first portion of reflected light is directed in a direction perpendicular to a direction of the second portion of reflected light. 
     
     
         28 . A system for processing a substrate, comprising:
 a pyrometer configured to measure an area of the substrate;   a light source configured to direct an amount of light to the area of the substrate;   a focus lens positioned to collect light reflected from the substrate;   a beam splitter optically coupled to the focus lens; and   an emissometer configured to determine an emissivity of the substrate, wherein the beam splitter directs a first portion of the light reflected from the substrate to the emissometer.   
     
     
         29 . The system of  claim 28 , further comprising an imaging device, wherein the beam splitter directs a second portion of the light reflected from the substrate to the imaging device. 
     
     
         30 . The system of  claim 29 , wherein the imaging device is a CCD camera. 
     
     
         31 . The system of  claim 28 , further comprising a processor coupled to the emissometer and the pyrometer and configured to determine a temperature of the substrate. 
     
     
         32 . The system of  claim 31 , wherein the processor determines the temperature of the substrate by measuring an amount of thermal radiation emitted from the substrate using the pyrometer and correcting the measured amount of thermal radiation using an emissivity of the substrate determined using the emissometer.