Copper sulfate, copper sulfate solution, plating solution, method for producing copper sulfate, method for producing semiconductor circuit board, and method for producing electronic apparatus

Abstract

Copper sulfate which includes an Al with a concentration of 0.08 ppm by mass or less.

What is claimed is: 
     
         1 . Copper sulfate comprising an Al with a concentration of 0.08 ppm by mass or less. 
     
     
         2 . The copper sulfate according to  claim 1 , wherein the copper sulfate further comprises any one, any two, any three, or four of the following items (3-1) to (3-4):
 (3-1) an In with a concentration of 1.0 ppm by mass or less,   (3-2) a Tl with a concentration of 0.05 ppm by mass or less,   (3-3) a Sn with a concentration of 1.0 ppm by mass or less, and   (3-4) an Ag with a concentration of 1.0 ppm by mass or less.   
     
     
         3 . The copper sulfate according to  claim 1 , wherein the copper sulfate further comprises any one, any two, any three, or four of the following items (4-1) to (4-4):
 (4-1) an In with a concentration of 0.5 ppm by mass or less,   (4-2) a Tl with a concentration of 0.05 ppm by mass or less,   (4-3) a Sn with a concentration of 0.5 ppm by mass or less, and   (4-4) an Ag with a concentration of 0.8 ppm by mass or less.   
     
     
         4 . The copper sulfate according to  claim 1 , wherein the copper sulfate further comprises any one, any two, any three, or four of the following items (5-1) to (5-4):
 (5-1) an In with a concentration of 0.2 ppm by mass or less,   (5-2) a Tl with a concentration of 0.05 ppm by mass or less,   (5-3) a Sn with a concentration of 0.2 ppm by mass or less, and   (5-4) an Ag with a concentration of 0.3 ppm by mass or less.   
     
     
         5 . The copper sulfate according to  claim 1 , wherein the copper sulfate has a concentration of copper sulfate of 99.9% by mass or more and 99.999% by mass or less. 
     
     
         6 . The copper sulfate according to  claim 5 , wherein the copper sulfate has a concentration of copper sulfate of 99.995% by mass or less. 
     
     
         7 . The copper sulfate according to  claim 1 , wherein the copper sulfate has a concentration of copper sulfate of 99.9% by mass or more and 99.99% by mass or less and a concentration of metal impurities other than Cu of 30 ppm by mass or less in total. 
     
     
         8 . The copper sulfate according to  claim 1 , wherein the copper sulfate has a total organic carbon concentration of 10 ppm by mass or less. 
     
     
         9 . A copper sulfate solution comprising the copper sulfate according to  claim 1 . 
     
     
         10 . A method for producing copper sulfate comprising:
 concentrating by heating a copper sulfate raw material solution obtained by dissolving a copper raw material in concentrated sulfuric acid; and   
       cooling the copper sulfate raw material solution after concentrating by heating, until a temperature of the copper sulfate raw material solution becomes 25° C., at a cooling rate of 15° C./hr or less, so as to deposit crystals of copper sulfate pentahydrate. 
     
     
         11 . A plating solution comprising an Al with a concentration of 0.018 ppm by mass or less. 
     
     
         12 . The plating solution according to  claim 11 , wherein the plating solution further comprises any one, any two, any three, or four of the following items (20-1) to (20-4):
 (20-1) an In with a concentration of 0.23 ppm by mass or less,   (20-2) a Tl with a concentration of 0.01 ppm by mass or less,   (20-3) a Sn with a concentration of 0.23 ppm by mass or less, and   (20-4) an Ag with a concentration of 0.23 ppm by mass or less.   
     
     
         13 . The plating solution according to  claim 11 , wherein the plating solution further comprises any one, any two, any three, or four of the following items (21-1) to (21-4):
 (21-1) an In with a concentration of 0.01 ppm by mass or less,   (21-2) a Tl with a concentration of 0.01 ppm by mass or less,   (21-3) a Sn with a concentration of 0.01 ppm by mass or less, and   (21-4) an Ag with a concentration of 0.01 ppm by mass or less.   
     
     
         14 . The plating solution according to  claim 11 , wherein the plating solution has a copper concentration of from 50 to 100 g/L. 
     
     
         15 . The plating solution according to  claim 11 , wherein the plating solution comprises a copper concentration of from 50 to 90 g/L. 
     
     
         16 . A method for producing a semiconductor circuit board comprising performing copper plating by using the plating solution according to  claim 11 . 
     
     
         17 . A method for producing an electronic apparatus comprising producing an electronic apparatus by using a semiconductor circuit board produced by the method for producing a semiconductor circuit board according to  claim 16 .