Laser diode module

Abstract

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

We claim: 
     
         1 . A laser diode module comprising:
 a first semiconductor die including at least one electronic switch; and   a second semiconductor die including at least one laser diode,   wherein the second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch, the laser diode.   
     
     
         2 . The laser diode module of  claim 1 , further comprising:
 a third semiconductor die including at least one buffer capacitor; the third semiconductor die being bonded on the first semiconductor die using a chip-on-chip connecting technology.   
     
     
         3 . The laser diode module of  claim 1 ,
 wherein the first semiconductor die further includes at least one driver circuit coupled to the electronic switch and configured to drive the electronic switch on and off.   
     
     
         4 . The laser diode module of  claim 1 ,
 wherein the second semiconductor die has two electrodes on the same side and is flip-chip mounted on the first semiconductor die.   
     
     
         5 . The laser diode module of  claim 2 ,
 wherein the third semiconductor die has two electrodes on the same side and is flip-chip mounted on the first semiconductor die.   
     
     
         6 . The laser diode module of  claim 1 ,
 wherein the second semiconductor die has a first electrode on a top side and a second electrode on a bottom side of the second semiconductor die, the second electrode being bonded to the first semiconductor die using chip-on-chip connecting technology and the first electrode being connected to the first semiconductor die using a clip or a bond wire.   
     
     
         7 . The laser diode module of  claim 1 ,
 wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal.   
     
     
         8 . The laser diode module of  claim 2 ,
 wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal, and   wherein the buffer capacitor is connected between a supply terminal and a ground terminal.   
     
     
         9 . The laser diode module of  claim 1 , further comprising:
 wherein the first semiconductor die includes at least one buffer capacitor.   
     
     
         10 . The laser diode module of  claim 1 , further comprising:
 a lead frame, on which the first semiconductor die is attached.   
     
     
         11 . The laser diode module of  claim 10 ,
 wherein the first semiconductor die is flip-chip mounted on the lead frame without using bond wires.   
     
     
         12 . The laser diode module of  claim 10 , further comprising:
 at least one capacitor attached on the lead-frame.   
     
     
         13 . A laser diode module comprising:
 a lead frame;   a first semiconductor die including at least one electronic switch and attached to the lead-frame;   at least one capacitor attached to the lead frame; and   a second semiconductor die including at least one laser diode, the second semiconductor die being arranged between the lead frame and a metal cap or a metal clip, so that a bottom side of the second semiconductor die contacts the lead frame and a top side of the second semiconductor die contacts the clip or the metal cap.   
     
     
         14 . The laser diode module of  claim 13 ,
 wherein the first semiconductor die is flip-chip mounted on the lead frame without using bond wires.   
     
     
         15 . The laser diode module of  claim 13 ,
 wherein the at least one capacitor is surface mounted on the lead frame without using bond wires.   
     
     
         16 . A laser diode module comprising:
 a first semiconductor die including at least one electronic switch;   a second semiconductor die including at least one laser diode; and   a third semiconductor die including at least one buffer capacitor,   wherein the first and the third semiconductor die are embedded in one chip package and the second semiconductor die is a bare die bonded to a surface of the chip package.   
     
     
         17 . The laser diode module of  claim 16 ,
 wherein the chip package is an enhanced wafer level ball grid array (eWLB) package.   
     
     
         18 . The laser diode module of  claim 16 ,
 wherein the second semiconductor is soldered solder pads arranged either on the top side or the bottom side of the chip package.   
     
     
         19 . The laser diode module of any of  claim 16 ,
 wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal, and   wherein the buffer capacitor is connected between a supply terminal and a ground terminal.   
     
     
         20 . A laser diode module comprising:
 a first semiconductor die including at least one electronic switch; and   a second semiconductor die including at least one laser diode,   wherein the first semiconductor die and the second semiconductor die are bare dies embedded in a circuit board.   
     
     
         21 . The laser diode module of  claim 20  further comprising:
 a third semiconductor die including at least one buffer capacitor, the third semiconductor die being embedded in the circuit board. 
 
     
     
         22 . The laser diode module of  claim 20 ,
 wherein a buffer capacitor is included in the first semiconductor die.   
     
     
         23 . The laser diode module of  claim 22 ,
 wherein the buffer capacitor is configured to buffer a supply voltage.   
     
     
         24 . The laser diode module of any of  claim 20 , further comprising:
 a fourth semiconductor chip including a micro-scanning mirror.   
     
     
         25 . The laser diode module of any of  claim 20 ,
 wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal.   
     
     
         26 . The laser diode module of  claim 21 ,
 wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal, and   wherein the buffer capacitor is connected between a supply terminal and a ground terminal.   
     
     
         27 . The laser diode module of  claim 21 ,
 wherein the third semiconductor die is arranged on a first metallization layer of the circuit board.   
     
     
         28 . The laser diode module of any of  claim 20 ,
 wherein the second semiconductor die is arranged between a first metallization layer and a second metallization layer of the circuit board.   
     
     
         29 . The laser diode module of  claim 28 ,
 wherein the first semiconductor die is arranged between the second metallization layer and a third metallization layer of the circuit board.   
     
     
         30 . A laser diode module comprising:
 a first semiconductor die including at least one electronic switch; and   a second semiconductor die including at least one laser diode,   wherein the first semiconductor die is a bare die embedded in an intermediate level of a circuit board, and   wherein the second semiconductor die is arranged in a top or a bottom level of the circuit board.   
     
     
         31 . The laser diode module of  claim 30 , further comprising:
 at least one buffer capacitor embedded in an intermediate level of a circuit board.