US2018277782A1PendingUtilityA1

Quantum dot electronic device and quantum dot transfer printing method

Assignee: SEOUL NAT UNIV R&DB FOUNDATIONPriority: Nov 28, 2014Filed: May 24, 2018Published: Sep 27, 2018
Est. expiryNov 28, 2034(~8.3 yrs left)· nominal 20-yr term from priority
B41F 9/00C09D 11/50H01L 51/56H01L 51/5072Y10S977/774H01L 51/5088Y10S977/892H01L 2251/5338H01L 51/0043B82Y 20/00C09D 11/037H01L 51/5253H01L 51/5056H01L 51/003H01L 51/0039H01L 51/0035H01L 51/5092B82Y 40/00H01L 51/502Y10S977/824C09K 11/883H01L 51/0097Y10S977/95H01L 2251/301H01L 51/0037H01L 2251/558H01L 51/0004H10K 50/115C09D 11/52H10K 85/151H10K 2102/311H10K 85/115H10K 85/1135H10K 50/171H10K 77/111H10K 50/15H10K 50/844H10K 50/17H10K 71/13H10K 71/80H10K 2102/00H10K 71/00H10K 50/16H10K 2102/351H10K 85/111B82Y 30/00H05B 33/145Y02P70/50Y02E10/549
63
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be famed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.

Claims

exact text as granted — not AI-modified
1 - 17 . (canceled) 
     
     
         18 . A quantum dot transfer printing method comprising:
 forming a quantum dot layer on a donor substrate;   picking up the quantum dot layer using a stamp;   putting the quantum dot layer into contact with an intaglio substrate using the stamp; and   separating the stamp from the intaglio substrate.   
     
     
         19 . The quantum dot transfer printing method of  claim 18 , wherein a surface treatment of the donor substrate is performed before forming the quantum dot layer. 
     
     
         20 . The quantum dot transfer printing method of  claim 18 , wherein the quantum dot layer is formed of a colloid nanocrystal substance comprising a quantum dot. 
     
     
         21 . The quantum dot transfer printing method of  claim 18 , wherein the stamp is formed of PDMS (polydimethylsiloxane). 
     
     
         22 . The quantum dot transfer printing method of  claim 18 , wherein a surface energy of the intaglio substrate is greater than a surface energy of the stamp. 
     
     
         23 . The quantum dot transfer printing method of  claim 18 , wherein the intaglio substrate is formed of polymer, glass, organic material or oxide. 
     
     
         24 . The quantum dot transfer printing method of  claim 18 , wherein the intaglio substrate has a recess area that is concavely formed from its surface to its inside. 
     
     
         25 . The quantum dot transfer printing method of  claim 24 , wherein, when the stamp is separated from the intaglio substrate, a portion being in contact with the intaglio substrate in the quantum dot layer remains in the intaglio substrate, and a portion corresponding to the recess area is picked up by the stamp. 
     
     
         26 . The quantum dot transfer printing method of  claim 18 , wherein a uniform pressure is put on the quantum dot layer when putting the quantum dot layer into contact with the intaglio substrate using the stamp.

Join the waitlist — get patent alerts

Track US2018277782A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.