Quantum dot electronic device and quantum dot transfer printing method
Abstract
A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be famed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.
Claims
exact text as granted — not AI-modified1 - 17 . (canceled)
18 . A quantum dot transfer printing method comprising:
forming a quantum dot layer on a donor substrate; picking up the quantum dot layer using a stamp; putting the quantum dot layer into contact with an intaglio substrate using the stamp; and separating the stamp from the intaglio substrate.
19 . The quantum dot transfer printing method of claim 18 , wherein a surface treatment of the donor substrate is performed before forming the quantum dot layer.
20 . The quantum dot transfer printing method of claim 18 , wherein the quantum dot layer is formed of a colloid nanocrystal substance comprising a quantum dot.
21 . The quantum dot transfer printing method of claim 18 , wherein the stamp is formed of PDMS (polydimethylsiloxane).
22 . The quantum dot transfer printing method of claim 18 , wherein a surface energy of the intaglio substrate is greater than a surface energy of the stamp.
23 . The quantum dot transfer printing method of claim 18 , wherein the intaglio substrate is formed of polymer, glass, organic material or oxide.
24 . The quantum dot transfer printing method of claim 18 , wherein the intaglio substrate has a recess area that is concavely formed from its surface to its inside.
25 . The quantum dot transfer printing method of claim 24 , wherein, when the stamp is separated from the intaglio substrate, a portion being in contact with the intaglio substrate in the quantum dot layer remains in the intaglio substrate, and a portion corresponding to the recess area is picked up by the stamp.
26 . The quantum dot transfer printing method of claim 18 , wherein a uniform pressure is put on the quantum dot layer when putting the quantum dot layer into contact with the intaglio substrate using the stamp.Join the waitlist — get patent alerts
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