Semiconductor device manufacturing method and semiconductor device

Abstract

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

1 . A semiconductor device comprising a wiring board and a semiconductor chip mounted on the wiring board,
 wherein the semiconductor chip has a region at own outer periphery where a test pad is arranged.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the semiconductor device has a structure in which a plurality of the semiconductor chips are stacked.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein a wiring layer on a main surface of the semiconductor chip has a low-dielectric-constant film in a method of manufacturing the semiconductor device.