Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Abstract

A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

1 - 11 . (canceled) 
     
     
         12 . A semiconductor manufacturing apparatus comprising:
 an irradiator irradiating an ion beam to a central portion of a target film formed on a wafer or an outer peripheral portion of the central portion of the target film to cause an impurity concentration in the outer peripheral portion of the target film and an impurity concentration in the central portion thereof to be different from each other; and   an ion beam mask partially covering the target film in order to shield a part of the ion beam from the irradiator.   
     
     
         13 . The apparatus of  claim 12 , wherein
 the ion beam mask comprises a first ion beam mask covering the outer peripheral portion of the target film, and   the irradiator irradiates an ion beam containing F, B, or N to the target film through the first ion beam mask.   
     
     
         14 . The apparatus of  claim 12 , wherein
 the ion beam mask comprises a second ion beam mask covering the central portion of the target film, and   the irradiator irradiates an ion beam containing C, N, or Si to the target film through the second ion beam mask.   
     
     
         15 . The apparatus of  claim 12 , wherein
 the ion beam mask comprises a first ion beam mask covering the outer peripheral portion of the target film, and a second ion beam mask covering the central portion of the target film,   the irradiator irradiates an ion beam containing F, B, or N to the target film through the first ion beam mask in order to increase a polishing rate of the target film, and   the irradiator irradiates an ion beam containing C, N, or Si to the target film through the second ion beam mask in order to decrease a polishing rate of the target film.   
     
     
         16 . The apparatus of  claim 12 , wherein the irradiator irradiates an ion beam containing F, B, or N to the target film a plurality of times at a plurality of acceleration energies different from each other. 
     
     
         17 .- 18 . (canceled) 
     
     
         19 . The apparatus of  claim 12 , wherein the ion beam mask blocks the ion beam irradiated to a chip area of the target film and allows the ion beam irradiated to an outer peripheral portion outside of the chip area, patterns are formed in the chip area and not formed in the outer peripheral portion. 
     
     
         20 . A semiconductor manufacturing apparatus comprising:
 an irradiator irradiating an ion beam to a central portion of a target film formed on a wafer or an outer peripheral portion of the central portion of the target film to cause an impurity concentration in the outer peripheral portion of the target film and an impurity concentration in the central portion thereof to be different from each other; and   an ion beam mask partially covering the target film in order to shield a part of the ion beam from the irradiator, wherein   the ion beam mask comprises a first ion beam mask covering the outer peripheral portion of the target film, and a second ion beam mask covering the central portion of the target film,   the irradiator irradiates an ion beam containing a first-type dopant to the target film through the first ion beam mask in order to increase a polishing rate of the target film, and   the irradiator irradiates an ion beam containing a second-type dopant to the target film through the second ion beam mask in order to decrease a polishing rate of the target film.