Light emitting device and method of fabricating the same

Abstract

A method of fabricating a light emitting device using a wafer level package process and a light emitting device fabricated by the same are disclosed. The light emitting device has improved heat dissipation to prevent damage by heat, thereby achieving improvement in reliability and luminous efficacy. In addition, the light emitting device has a small difference in coefficient of thermal expansion and thus can reduce stress applied to a light emitting structure to prevent damage to the light emitting structure, thereby achieving improvement in reliability and luminous efficacy.

1 - 18 . (canceled) 
     
     
         19 . A light emitting device, comprising:
 a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer a first electrode electrically connected to the first conductive type semiconductor layer;   a second electrode disposed on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer;   a lower insulation layer covering an upper surface of the light emitting structure and an upper surface and side surfaces of the second electrode, the lower insulation layer being disposed between the light emitting structure and the first electrode and insulating the first electrode from the second electrode;   an upper insulation layer covering a portion of the first electrode; and   a support structure comprising a first metal bulk and a second metal bulk separated from each other, disposed on the upper insulation layer, and electrically connected to the first electrode and the second electrode, respectively, and an insulation portion disposed between the first metal bulk and the second metal bulk,   wherein a difference in coefficients of thermal expansion represented by Equation 2 is 20% or less, and
   Difference in the coefficients of thermal expansion=[(Coefficient of thermal expansion of the support structure−Coefficient of thermal expansion of the light emitting structure)]/Coefficient of thermal expansion of the support structure]×100.
 
   
     
     
         20 . The light emitting device according to  claim 19 , wherein each of the first metal bulk and the second metal bulk comprises at least one of Cu, Mo, or W. 
     
     
         21 . The light emitting device according to  claim 19 , wherein each of the first metal bulk and the second metal bulk has a thickness of 100 μm or more. 
     
     
         22 . The light emitting device according to  claim 19 , wherein each of the first metal bulk and the second metal bulk has side surfaces protruding beyond a side surface of the light emitting structure. 
     
     
         23 . The light emitting device according to  claim 19 , wherein the insulation portion comprises an epoxy molding compound. 
     
     
         24 . The light emitting device according to  claim 19 , wherein the second electrode comprises a reflective metal layer and a barrier metal layer. 
     
     
         25 . The light emitting device according to  claim 19 , wherein the second electrode comprises indium tin oxide (ITO) and the lower insulation layer comprises a distributed Bragg reflector (DBR). 
     
     
         26 . The light emitting device according to  claim 19 , further comprising: an electrode protection layer disposed on the second electrode. 
     
     
         27 . The light emitting device according to  claim 19 , wherein the upper insulation layer covers the lower insulation layer adjoining the second electrode, and adjoins a portion of the second electrode. 
     
     
         28 . The light emitting device according to  claim 19 , wherein the first conductive type semiconductor layer comprises a rough surface. 
     
     
         29 . The light emitting device according to  claim 19 , further comprising:
 a wavelength conversion portion disposed on the first conductive type semiconductor layer.   
     
     
         30 . The light emitting device according to  claim 29 , wherein the wavelength conversion portion comprises a plurality of phosphor layers. 
     
     
         31 . The light emitting device according to  claim 19 , further comprising:
 a first pad disposed between the first electrode and the first metal bulk; and   a second pad disposed between the second electrode and the second metal bulk.   
     
     
         32 . The light emitting device according to  claim 19 , further comprising:
 a heat dissipation structure disposed on the first metal bulk and the second metal bulk.   
     
     
         33 . The light emitting device according to  claim 19 , further comprising:
 one or more holes penetrating the second conductive type semiconductor layer and the active layer and exposing the first conductive type semiconductor layer, the first conductive type semiconductor layer being electrically connected to the first electrode through the holes.   
     
     
         34 . The light emitting device according to  claim 19 , wherein the light emitting structure comprises:
 at least one mesa comprising the active layer and the second conductive type semiconductor layer; and   an exposing region formed adjacent to a side surface of the mesa and exposing the first conductive type semiconductor layer, the first conductive type semiconductor layer being electrically connected to the first electrode through the exposing region.   
     
     
         35 . The light emitting device according to  claim 34 , wherein the exposing region comprises a plurality of holes separated from each other. 
     
     
         36 . The light emitting device according to  claim 34 , wherein the exposing region surrounds the mesa.